SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20130001558A1
• Filed: 06/26/2012
• Published: 01/03/2013
• Est. Priority Date: 06/29/2011
• Status: Abandoned Application

• Current Assignee: Japan Display Incorporated
• Original Assignee: Hitachi Displays Limited (Japan Display Incorporated)
• Inventors: Noda, Takeshi, Okada, Naoya
• Application Number:
  US13/533,304
• Publication Number:
  US 20130001558A1
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 21/4763 Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers manufacture of electrodes H01L21/28, H01L21/44
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device includes a gate electrode, a gate insulating film provided so as to cover one surface of the gate electrode, an oxide semiconductor provided so as to overlap the gate insulating film, and a source electrode and a drain electrode, which are provided so as to overlap the oxide semiconductor. The semiconductor device also includes an oxygen-atom-containing film provided between the gate insulating film, and, the source electrode and the drain electrode, so as to be held in contact with the oxide semiconductor.

Claims

1. A semiconductor device comprising:

a gate electrode;

a gate insulating film provided so as to cover one surface of the gate electrode;

an oxide semiconductor provided so as to overlap the gate insulating film;

a source electrode and a drain electrode, which are provided so as to overlap the oxide semiconductor; and

an oxygen-atom-containing film provided between the gate insulating film, and, the source electrode and the drain electrode, so as to be held in contact with the oxide semiconductor.

2. The semiconductor device according to claim 1, wherein:

the oxide semiconductor includes a first oxide semiconductor layer and a second oxide semiconductor layer; and

the oxygen-atom-containing film is provided between the first oxide semiconductor layer and the second oxide semiconductor layer.

3. The semiconductor device according to claim 1, wherein the oxygen-atom-containing film comprises a water-containing film containing water.

4. The semiconductor device according to claim 3, wherein a water concentration of the water-containing film is higher than a water concentration of the oxide semiconductor.

5. The semiconductor device according to claim 3, wherein a water concentration of the water-containing film is 1 atm % to 30 atm %.

6. The semiconductor device according to claim 1, wherein the oxygen-atom-containing film is provided at a position corresponding to 20% to 80% of a thickness of the oxide semiconductor.

7. The semiconductor device according to claim 1, wherein the oxygen-atom-containing film is formed as a discontinuous film.

8. The semiconductor device according to claim 1, wherein a thickness of the oxide semiconductor is 5 nm to 200 nm.

9. The semiconductor device according to claim 2, wherein a material of the first oxide semiconductor layer is different from a material of the second oxide semiconductor layer.

10. A manufacturing method for a semiconductor device comprising:

forming at least a first electrode layer on a substrate;

forming a channel layer including an oxide semiconductor layer and an oxygen-atom-containing film on the substrate on which the at least the first electrode layer is formed;

forming at least a second electrode layer on the substrate on which the channel layer is formed; and

diffusing oxygen atoms contained in the oxygen-atom-containing film into the oxide semiconductor layer.

11. The manufacturing method for the semiconductor device according to claim 10, wherein the oxide semiconductor layer includes a first oxide semiconductor layer and a second oxide semiconductor layer, and

wherein the forming a channel layer comprises:

forming at least the first oxide semiconductor layer on the substrate on which the first electrode layer is formed;

forming the oxygen-atom-containing film on the first oxide semiconductor layer; and

forming the second oxide semiconductor layer on the oxygen-atom-containing film.