LIGHT-EMITTING DIODE AND METHOD FOR FORMING THE SAME

• US 20130001636A1
• Filed: 04/13/2012
• Published: 01/03/2013
• Est. Priority Date: 06/28/2011
• Status: Abandoned Application

• Current Assignee: Aceplux Optotech Inc.
• Original Assignee: Aceplux Optotech Inc.
• Inventors: LO, Hsin-Ming, SHEI, Shih-Chang
• Application Number:
  US13/446,588
• Publication Number:
  US 20130001636A1
• Time in Patent Office: Days
• US Class Current: 257/100
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

A light-emitting diode includes: an epitaxial substrate; a light-emitting unit including a lower semiconductor layer, and at least two epitaxial units that are separately formed on the lower semiconductor layer, the epitaxial units cooperating with the lower semiconductor layer to define two light-emitting sources that are capable of emitting different colors of light; and an electrode unit including a first electrode which is formed on an exposed portion of the lower semiconductor layer exposed from the epitaxial units, and at least two second electrodes each of which is formed on a corresponding one of the epitaxial units. A method for forming a light-emitting diode is also disclosed.

Claims

1. A light-emitting diode comprising:

an epitaxial substrate;

a light-emitting unit including a lower semiconductor layer, and at least two epitaxial units that are separately formed on said lower semiconductor layer, said epitaxial units cooperating with said lower semiconductor layer to define two light-emitting sources that are capable of emitting different colors of light; and

an electrode unit including a first electrode which is formed on an exposed portion of said lower semiconductor layer exposed from said epitaxial units, and at least two second electrodes each of which is formed on a corresponding one of said epitaxial units.

2. The light-emitting diode of claim 1, wherein said light-emitting unit includes three of said epitaxial units, said epitaxial units cooperating with said lower semiconductor layer to define three of said light-emitting sources that are capable of emitting different colors of light.

3. The light-emitting diode of claim 1, further comprising a light-transmissive encapsulant that encapsulates said light-emitting unit.

4. The light-emitting diode of claim 3, wherein said light-transmissive encapsulant is dispersed with fluorescent powders that are adapted to produce excitation light in response to the light from at least one of said light-emitting sources.

5. The light-emitting diode of claim 1, wherein each of said epitaxial units includes a light-emitting film formed on said lower semiconductor layer, and an upper semiconductor film that is formed on said light-emitting film opposite to said lower semiconductor layer, and that has an electrical property opposite to that of said lower semiconductor layer.

6. The light-emitting diode of claim 1, wherein said light-emitting sources are capable of emitting light simultaneously.

7. The light-emitting diode of claim 1, wherein each said light-emitting sources can be driven to turn-on and turn-off individually.

8. A method for forming a light-emitting diode comprising:

(a) forming over an epitaxial substrate a lower semiconductor layer;

(b) forming a first epitaxial unit on the lower semiconductor layer, the first epitaxial unit and the lower semiconductor layer defining a first light-emitting source;

(c) forming a second epitaxial unit on the lower semiconductor layer in a manner that the first and second epitaxial units are spaced apart from each other, the second epitaxial unit and the lower semiconductor layer defining a second light-emitting source, the first and second light-emitting sources being capable of emitting different colors of light; and

(d) forming a first electrode on an exposed portion of the lower semiconductor layer exposed from the first and second epitaxial units, and forming at least two second electrodes respectively on the first and second epitaxial units opposite to the lower semiconductor layer.

9. The method of claim 8, further comprising, before step (c), (e) forming a first protective layer on the first epitaxial unit, and (f) removing the first protective layer before step (d).

10. The method of claim 9, further comprising, before step (d):

(g) forming a second protective layer on the second epitaxial unit;

(h) forming a third epitaxial unit on the lower semiconductor layer in a manner that the first, second and third epitaxial units are spaced apart from one another, the third epitaxial unit and the lower semiconductor layer defining a third light-emitting source, the first, second and third light-emitting sources being capable of emitting different colors of light; and

(i) removing the second protective layer.

11. The method of claim 10, wherein each of the first, second and third epitaxial units includes a light-emitting film formed on the lower semiconductor layer, and an upper semiconductor film that is formed on the light-emitting film opposite to that of the lower semiconductor layer, and that has an electrical property opposite to that of the lower semiconductor layer.

12. The method of claim 8, further comprising:

(j) forming a light-transmissive encapsulant to encapsulate the first and second epitaxial units.

13. The method of claim 12, wherein the light-transmissive encapsulant is dispersed with fluorescent powders that are adapted to produce excitation light in response to the light from at least one of the first and second light-emitting sources.

14. The method of claim 8, wherein the first and second light-emitting sources are capable of emitting light simultaneously.

15. The method of claim 8, wherein each of the first and second light-emitting sources can be driven to turn-on and turn-off individually.