Light-Emitting Device Including a Dual Emission Panel

• US 20130003396A1
• Filed: 09/13/2012
• Published: 01/03/2013
• Est. Priority Date: 08/01/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sakata, Junichiro, Ibe, Takahiro, Ikeda, Hisao
• Granted Patent: US 8,796,911 B2
• Time in Patent Office: Days
• US Class Current: 362/509
• CPC Class Codes: H10K 2102/3031 Two-side emission, e.g. transparent OLEDs [TOLED]
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays

Abstract

There is a problem in a dual emission device emitting light out of both surfaces that an image on the surface and an image on the rear surface are different from each other (either image is mirror-reversed). A dual emission device is disclosed in which either light emitted from the light-emitting device is reflected by glass including a semi-transmissive film to display on glass an image same as another image obtained also from the light-emitting device, and simultaneously, external information can be viewed through the glass. A mirror can be arranged between the dual emission device and the glass including a semitransparent film.

Claims

1. A semiconductor device comprising:

a light-emitting device comprising;

a substrate having a flat surface; and

a light emitting layer over the substrate; and

an optical device adjacent to the light-emitting device,

wherein the optical device includes a first surface and a second surface,

wherein the first surface is flat and parallel to the flat surface,

wherein the second surface is a concave surface, and

wherein the optical device is configured to allow light from the light-emitting device to be extracted from the second surface.

2. The semiconductor device according to claim 1,

wherein the light-emitting device is a dual emission device.

3. The semiconductor device according to claim 1,

wherein the optical device is capable of adjusting an optical path or an optical path length.

4. The semiconductor device according to claim 1,

wherein the light extracted from the concave surface of the optical device is reflected by a semi-transmissive film.

5. A vehicle comprising the semiconductor device according to claim 1.

6. A semiconductor device comprising:

a light-emitting device comprising;

a substrate having a flat surface;

a first transistor over the substrate;

a second transistor over the substrate and electrically connected to the first transistor; and

a light emitting layer over the first transistor and the second transistor; and

an optical device adjacent to the light-emitting device,

wherein the optical device includes a first surface and a second surface,

wherein the first surface is flat and parallel to the flat surface,

wherein the second surface is a concave surface, and

wherein the optical device is configured to allow light from the light-emitting device to be extracted from the second surface.

7. The semiconductor device according to claim 6,

wherein the light-emitting device is a dual emission device.

8. The semiconductor device according to claim 6,

wherein the optical device is capable of adjusting an optical path or an optical path length.

9. The semiconductor device according to claim 6,

wherein the light extracted from the concave surface of the optical device is reflected by a semi-transmissive film.

10. A vehicle comprising the semiconductor device according to claim 6.