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SEMICONDUCTOR MEMORY DEVICE

  • US 20130003433A1
  • Filed: 03/19/2012
  • Published: 01/03/2013
  • Est. Priority Date: 06/28/2011
  • Status: Active Grant
First Claim
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1. A semiconductor memory device, comprising:

  • a semiconductor substrate;

    a plurality of memory units provided on the semiconductor substrate and each including a plurality of memory cells that are stacked; and

    a plurality of bit lines formed above each of a plurality of the memory units aligned in a column directionan alignment pitch in a row direction of the plurality of bit lines being less than an alignment pitch in the row direction of the memory units, andan end of each of the memory units aligned in the column direction being connected to one of the plurality of bit lines formed above the plurality of the memory units aligned in the column direction.

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