×

Magnetic Spin Shift Register Memory

  • US 20130005053A1
  • Filed: 09/13/2012
  • Published: 01/03/2013
  • Est. Priority Date: 07/09/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a memory device, the method including:

  • forming a cavity having an inner surface with an undulating profile in a substrate;

    depositing a ferromagnetic material in the cavity;

    forming a reading element on the substrate proximate to a portion of the ferromagnetic material; and

    forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×