SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
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Abstract
The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed in a sidewall of the trench; and a capping insulation layer formed in an upper portion of the gate electrode.
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Citations
15 Claims
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1-12. -12. (canceled)
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13. A method of manufacturing a semiconductor device, the method comprising:
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forming a trench defining a buried gate within a semiconductor substrate; implanting ions on a sidewall of the trench to define an implantation region; filling conductive material within the trench; and removing an upper portion of the conductive material to define a gate electrode within a lower portion of the trench. - View Dependent Claims (14, 15)
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Specification