METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- forming an interlayer dielectric layer having at least one trench therein on a substrate;
subsequently forming a metal layer on the substrate such that the metal layer has a first section extending along sides of the trench, a second section extending along the bottom of the trench and a third section extending along an upper surface of the interlayer dielectric layer;
forming a sacrificial layer pattern that fills only a lower part of the trench and exposes an upper part of the first section of the metal layer in the trench;
forming a spacer pattern covering the surface of the exposed upper part of the first section of the metal layer in the trench; and
forming a first gate metal layer at the lower part of the trench by etching the metal layer using the sacrificial layer pattern and the spacer pattern together as an etch mask.
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Accused Products
Abstract
A method of manufacturing a semiconductor device can uniformly form a metal gate irrespective of gate pattern density. The method includes forming an interlayer dielectric layer having a trench on a substrate, forming a metal layer having first, second and third sections extending along the sides of the trench, the bottom of the trench and on the interlayer dielectric layer, respectively, forming a sacrificial layer pattern exposing an upper part of the first section of the metal layer, forming a spacer pattern on the exposed part of the first section of the metal layer, and forming a first gate metal layer by etching the first section of the metal layer using the sacrificial layer pattern and the spacer pattern as masks.
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Citations
20 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming an interlayer dielectric layer having at least one trench therein on a substrate; subsequently forming a metal layer on the substrate such that the metal layer has a first section extending along sides of the trench, a second section extending along the bottom of the trench and a third section extending along an upper surface of the interlayer dielectric layer; forming a sacrificial layer pattern that fills only a lower part of the trench and exposes an upper part of the first section of the metal layer in the trench; forming a spacer pattern covering the surface of the exposed upper part of the first section of the metal layer in the trench; and forming a first gate metal layer at the lower part of the trench by etching the metal layer using the sacrificial layer pattern and the spacer pattern together as an etch mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a semiconductor device, the method comprising:
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providing a substrate; forming an interlayer dielectric layer having at least one first trench therein on one region of the substrate and at least one second trench therein on another region on the substrate; forming a mask layer that covers said another region of the substrate; forming a metal layer in each said at least one first trench, wherein the metal layer has a first section extending along the sides of each said first trench and a second section extending along the bottom of each said first trench; forming a sacrificial layer pattern that fills only a lower part of each said first trench and exposes an upper part of the first section of the metal layer in the first trench; forming a spacer pattern covering the surface of the exposed upper part of the first section of the metal layer in each said first trench; forming a first gate metal layer at the lower part of each said first trench by etching the metal layer using the sacrificial layer and spacer patterns together as an etch mask; removing the mask layer; and subsequently forming a second gate metal layer that fills what remains of each said first trench and that fills each said second trench. - View Dependent Claims (15)
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16. A method of manufacturing a semiconductor device, the method comprising:
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forming an interlayer dielectric layer having first and second trenches therein on a substrate; subsequently forming a metal layer on the substrate conforming to the underlying topography of an intermediate structure that includes the interlayer dielectric layer and the first and second trenches, whereby the metal layer extends along surfaces delimiting the sides and bottoms of the first and second trenches; subsequently forming a sacrificial layer pattern on the substrate by a process that results in the filling of the first trench with sacrificial material to a first level and the filling of the second trench with sacrificial material to a second level below the first level, such that the sacrificial layer pattern formed of said sacrificial material exposes more of the metal layer in the second trench than in the first trench; forming a spacer pattern that covers those parts of the metal layer exposed by the sacrificial layer pattern; and forming a first gate metal layer at the lower part of each of the first and second trenches by etching the metal layer using the sacrificial layer and spacer patterns together as an etch mask. - View Dependent Claims (17, 18, 19, 20)
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Specification