ESTIMATING TEMPORAL DEGRADATION OF NON-VOLATILE SOLID-STATE MEMORY
First Claim
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1. A method comprising:
- identifying representative locations of a non-volatile, solid-state memory of an apparatus that store characterization data;
detecting an event during which elapsed time is not measured by the apparatus; and
in response to the event, estimating temporal degradation of the non-volatile, solid-state memory during the event based on electrical characteristics of the representative locations.
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Abstract
Representative locations of a non-volatile, solid-state memory of an apparatus store characterization data. An event during which elapsed time is not measured by the apparatus is determined. In response to the event, temporal degradation of the non-volatile, solid-state memory during the event is estimated based on electrical characteristics of the representative locations.
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Citations
20 Claims
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1. A method comprising:
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identifying representative locations of a non-volatile, solid-state memory of an apparatus that store characterization data; detecting an event during which elapsed time is not measured by the apparatus; and in response to the event, estimating temporal degradation of the non-volatile, solid-state memory during the event based on electrical characteristics of the representative locations. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An apparatus comprising:
a controller capable of being coupled to a non-volatile, solid-state memory, and configured to; identify representative locations of the non-volatile, solid-state memory; detect an event during which elapsed time is not measured by the apparatus; and in response to the event, estimate temporal degradation of the non-volatile, solid-state memory during the event based on electrical characteristics of the representative locations. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An apparatus comprising:
a controller capable of being coupled to a non-volatile, solid-state memory, and configured to; detect an event during which elapsed time is not measured by the apparatus; in response to the event, recover characterization data at representative locations of the non-volatile, solid-state memory to determine electrical characteristics of the representative locations; and estimate temporal degradation of the non-volatile, solid-state memory during the event based on the electrical characteristics.
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20. The apparatus of claim 20, wherein the characterization data comprise at least one of:
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a known signature pattern; and user data with an extra amount of error correction code.
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Specification