INTEGRATED CIRCUIT MODULE AND MANUFACTURING METHODS AND APPLICATION THEREOF
First Claim
1. An integrated circuit module comprising:
- a first transistor, having a first channel length and a first threshold voltage; and
a second transistor, electrically coupled to the first transistor, having a second channel length and a second threshold voltage,wherein the second channel length is greater than the first channel length, the absolute value of the second threshold voltage is smaller than the absolute value of the first threshold voltage, and the first transistor and the second transistor have a same threshold voltage implant concentration.
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Abstract
An exemplary integrated circuit module includes a first transistor and a second transistor. The first transistor has a first channel length and a first threshold voltage. The second transistor is electrically coupled to the first transistor and has a second channel length and a second threshold voltage. The second channel length is greater than the first channel length, the absolute value of the second threshold voltage is smaller than the absolute value of the first threshold voltage, and the first transistor and the second transistor have a same threshold voltage implant concentration. Moreover, a manufacturing method of such integrated circuit module, and an application of such integrated circuit module to computer aided design of logic circuit also are provided.
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Citations
20 Claims
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1. An integrated circuit module comprising:
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a first transistor, having a first channel length and a first threshold voltage; and a second transistor, electrically coupled to the first transistor, having a second channel length and a second threshold voltage, wherein the second channel length is greater than the first channel length, the absolute value of the second threshold voltage is smaller than the absolute value of the first threshold voltage, and the first transistor and the second transistor have a same threshold voltage implant concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing an integrated circuit module, comprising:
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providing a substrate; sequentially forming a gate dielectric layer and a gate material layer on the substrate in that order; performing a threshold voltage implant process on the gate material layer to define a threshold voltage implant region in the substrate; and forming a first transistor and a second transistor electrically coupled with each other on the substrate and thereby respectively defining a first channel and a second channel in the threshold voltage implant region, wherein a length of the second channel is greater than that of the first channel. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A computer aided design method for creating a logic circuit, comprising:
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simulating a design of the logic circuit, wherein the logic circuit is comprised of a plurality of standard integrated circuit modules; analyzing the logic circuit to determine a critical path in the logic circuit; and providing an integrated circuit module with reverse short channel effect to replace at least one of the standard integrated circuit modules in the critical path, wherein the integrated circuit module with revere short channel effect comprises; a first transistor, having a first channel length and a first threshold voltage; and a second transistor, electrically coupled to the first transistor, having a second channel length and a second threshold voltage, wherein the second channel length is greater than the first channel length, the absolute value of the second threshold voltage is smaller than the absolute value of the first threshold voltage, and the first transistor and the second transistor have a same threshold voltage implant concentration. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification