METHOD FOR PROCESSING OUTER PERIPHERY OF SUBSTRATE AND APPARATUS THEREOF

• US 20130008870A1
• Filed: 09/14/2012
• Published: 01/10/2013
• Est. Priority Date: 07/09/2004
• Status: Abandoned Application

• Current Assignee: Sekisui Chemical Company Limited (Sekisui)
• Original Assignee: Sekisui Chemical Company Limited (Sekisui)
• Inventors: NOGAMI, Mitsuhide, HASEGAWA, Taira, KUNUGI, Syunsuke
• Application Number:
  US13/618,594
• Publication Number:
  US 20130008870A1
• Time in Patent Office: Days
• US Class Current: 216/55
• CPC Class Codes: H01L 21/02087 Cleaning of wafer edges
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support

Abstract

To make an arrangement so as not to give any damage to the central part of a substrate during the operation for removing unnecessary film coated on the outer peripheral part of the substrate. The stage is provided therein with a refrigerant chamber 41 as a heat absorber and a refrigerant such as water is filled in the chamber. A wafer 90 is contacted with and supported on the support surface 10a of the stage 10. A reactive gas for removing unnecessary film is supplied the outer periphery of the wafer 90 through a reactive gas jet port 30b while heating the outer periphery of the wafer 90. On the other hand, the area inside the outer peripheral part of the wafer 90 is heat-absorbed by the heat absorber.

Claims

1. A method for processing the outer peripheral part of a substrate in which an unnecessary matter coated on the outer peripheral part of said substrate is removed by contacting said unnecessary matter with a reactive gas, said method comprising:

supporting said substrate by a stage so as to be brought a proximal outer peripheral part of said substrate into contact with a support surface of said stage in a manner protruding the outer peripheral part of said substrate from said stage;

locally radiantly heating the protruded outer peripheral part of said substrate with a thermal light;

supplying said reactive gas to the heated outer peripheral part of said substrate; and

heat absorbing the proximal outer peripheral part of said substrate by a heat absorber disposed on said stage.

2. An apparatus for processing the outer peripheral part of a substrate in which an unnecessary matter coated on the outer peripheral part of said substrate is removed by contacting said unnecessary matter with a reactive gas, said apparatus comprising:

(a) a stage including a support surface for supporting said substrate thereon, a diameter of said support surface being smaller than a diameter of the substrate so that a proximal outer peripheral part of said substrate contacts with said support surface in a manner protruding from said support surface in a radial direction;

(b) a radiant heater including an irradiator that locally irradiates a thermal light to a target position located radially outwardly from an outer periphery of the stage, wherein the target position is supposed to exist on the protruded outer peripheral part of said substrate supported by said stage; and

(c) a reactive gas supplier that supplies said reactive gas to said target position wherein an angle of an axis of the thermal light between the irradiator and the target position with respect to the support surface is not lower than 90 degrees and not greater than 270 degrees.

3. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein the apparatus further comprises a refrigerator for cooling said stage.

4. An apparatus for processing the outer peripheral part of a substrate according to claim 3, wherein a refrigerant chamber is formed within said stage, and said refrigerant chamber is connected with a refrigerant supply path and a refrigerant exhaust path.

5. An apparatus for processing the outer peripheral part of a substrate according to claim 3, wherein a refrigerant path is disposed on said stage and a refrigerant is passed through said refrigerant path.

6. An apparatus for processing the outer peripheral part of a substrate according to claim 5, wherein said refrigerant path includes a plurality of concentric annular paths and a communication path for interconnecting said annular paths.

7. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein the apparatus further comprises a heat absorber that absorbs heat from said support surface, and wherein said heat absorber is disposed only at the outer peripheral side part of said stage and not at the central side part.

8. An apparatus for processing outer peripheral part of a substrate according to claim 7, wherein said stage is provided at the outer peripheral side part with a chuck mechanism for sucking said substrate and at the central side part with a recess which is depressed with respect to said area where said chuck mechanism is disposed.

9. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein the apparatus further comprises a heat absorber disposed on at least an outer peripheral side part of said stage and that absorbs heat from said support surface, and wherein said support surface of said stage has an annular shape having a recess in the central part thereof.

10. An apparatus for processing the outer peripheral part of a substrate according to claim 9, wherein said stage is provided at the outer peripheral side part with a chuck mechanism for sucking said substrate only at the outer peripheral side part of said stage.

11. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said irradiator is disposed so as to face a reverse side of the outer peripheral part of said substrate supported by said stage, and

said jet port is disposed so as to face the reverse side or an outer end surface of said substrate supported by said stage.

12. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said irradiator irradiates said thermal light toward said target position from a direction declined radially outwardly of said support surface.

13. An apparatus for processing the outer peripheral part of a substrate according to claim 2, further comprising a moving mechanism that moves said irradiator in a plane orthogonal to said support surface while directing said irradiator toward said target position.

14. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said reactive gas supplier includes a jet port forming member for forming said jet port, and said jet port forming member is composed of a light transmissive material.

15. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said reactive gas supplier comprises an introduction part for introducing said reactive gas to the vicinity of said target position and a cylindrical part connected to said introduction part and overlain said target position, the interior of said cylindrical part is more widely spread than said introduction part and defined as a temporary reservoir space for temporarily reserving therein said reactive gas.

16. An apparatus for processing the outer peripheral part of a substrate according to claim 15, wherein a basal end part of said cylindrical part is provided with a light transmissive closure part for closing said basal end part, and said irradiator is disposed outside said closure part.

17. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said stage includes a stage main body having a refrigerant chamber or a refrigerant path formed therein, and a center pad disposed at a central part of said stage main body in such a manner as to be able to be projected from and received in said stage main body,

said stage further comprises:

a fixed cylinder provided with a port for a refrigerant,

a rotary cylinder rotatably passing through said fixed cylinder and coaxially connected to said stage main body, and

a rotation driver for rotating said rotary cylinder,

an annular path connected to said port being formed at an inner peripheral surface of said fixed cylinder or an outer peripheral surface of said rotary cylinder,

an axial path extending in the axial direction being formed in said rotary cylinder, one end part of said axial path being connected to said annular path and the other end part being connected to said refrigerant chamber or said refrigerant path.

18. A stage structure according to claim 17, wherein two annular seal grooves are formed in an inner peripheral surface of said fixed cylinder or an outer peripheral surface of said rotary cylinder such that said seal grooves are located on both sides of said annular path sandwiched therebetween, and

each of said seal grooves receives therein a gasket having a II-shaped configuration in section and opening toward said annular path.

19. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said reactive gas supplier comprises a gas guide member,

said gas guide member includes an insertion port for allowing said substrate to be removably inserted therein, and a guide path connected to the innermost end of said insertion port and extending in the peripheral direction of said substrate in such a manner as to enclose the outer peripheral part of said substrate, and

said reactive gas is passed in the extending direction of said guide path.

20. An apparatus for processing the outer peripheral part of a substrate according to claim 19, wherein said irradiator irradiates said thermal light toward the interior of said guide path in a converging manner, a light transmissive member for allowing said thermal light of said irradiator to transmit therethrough being embedded in said gas guide member in such a manner as to face with said guide path.

21. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein an organic film and an inorganic film are laminated on the outer peripheral part of said substrate as unnecessary matters, and

said reactive gas reacts with said organic film, and said reactive gas supplier is provided for removing said organic film,

said apparatus further comprises another reactive gas supplier that supplies another reactive gas, which is reactable with said inorganic film, to the outer peripheral part of said substrate on said stage.

22. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said substrate is a circular wafer having a cutout part such as a notch or an orientation flat formed in a part of the outer peripheral part thereof,

said reactive gas supplier includes a reactive gas supply nozzle which can be slid along a first axis orthogonal to the center axis of said stage,

said wafer is centered and arranged on said stage, said stage is rotated about the center axis, and

said supply nozzle is positionally adjusted along said first axis in synchronism with the rotation of said stage, thereby sliding said supply nozzle along said first axis so that when said circular outer peripheral part of said wafer is moved across said first axis, a tip part of said supply nozzle is held stationary toward a position on said first axis which is away from said center axis by a substantially same distance as the radius of said wafer and when said cutout part of said wafer is moved across said first axis, the tip part of said supply nozzle is normally directed to the crossing point.

23. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said substrate is a circular wafer,

said reactive gas supplier includes a reactive gas supply nozzle which is slideable along a first axis orthogonal to the center axis of said stage,

said stage is rotatable about said center axis while absorptively retaining said wafer,

said apparatus further comprises a calculator for calculating momentary points where the outer peripheral part of said wafer crosses said first axis, and

said processing fluid supply nozzle is positionally adjusted along said first axis based on the calculated result, thereby supplying said processing fluid while being always directed toward said crossing points.

24. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein an amount of protrusion of the outer peripheral part of the substrate from the support surface in the radial direction is 3 mm to 5 mm.

25. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein the apparatus further comprises a heat absorber disposed on at least an outer peripheral side part of said stage and that absorbs heat from said support surface.

26. An apparatus for processing the outer peripheral part of a substrate according to claim 2, wherein said reactive gas supplier includes a jet port for jetting out said reactive gas to said target position, and said jet port is disposed more proximate to said target position than from said irradiator.