LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE

• US 20130009196A1
• Filed: 09/13/2012
• Published: 01/10/2013
• Est. Priority Date: 04/01/2010
• Status: Abandoned Application

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: IWANAGA, Junko, YOKOGAWA, Toshiya, YAMADA, Atsushi
• Application Number:
  US13/613,464
• Publication Number:
  US 20130009196A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting diode element disclosed in the present application, comprises a first semiconductor layer made of a gallium nitride-based compound and having first and second front surface regions and a rear surface, a second semiconductor layer at the first front surface region and an active layer interposed therebetween. A first electrode is provided on a principal surface of the second semiconductor layer. A second electrode is provided at the second front surface region. A third electrode is provided on the rear surface. A thorough hole having openings in the second front surface region and the rear surface is provided in the first semiconductor layer, and a conductor portion is provided in the through hole.

Claims

1. A light-emitting diode element, comprising:

a first semiconductor layer of a first conductivity type having a first front surface region, a second front surface region, and a rear surface, the first semiconductor layer being made of a gallium nitride-based compound;

a second semiconductor layer of a second conductivity type, which is provided at the first front surface region;

an active layer, which is positioned between the first semiconductor layer and the second semiconductor layer;

a first electrode, which is provided on a principal surface of the second semiconductor layer;

a first insulating film, which is provided on an inner wall of a through hole, the through hole penetrating through the first semiconductor layer and having openings in the second front surface region and the rear surface;

a conductor portion, which is provided on a surface of the first insulating film inside the through hole;

a second electrode, which is provided at the second front surface region and is in contact with the conductor portion; and

a third electrode, which is provided on the rear surface of the first semiconductor layer and is in contact with the conductor portion,

wherein, when seen in a direction perpendicular to a principal surface of the first semiconductor layer, the third electrode is provided in a region that overlaps the first electrode.

2. The light-emitting diode element of claim 1, wherein:

the first semiconductor layer includes a semiconductor substrate and a gallium nitride-based compound semiconductor layer formed on a principal surface of the semiconductor substrate;

the rear surface of the first semiconductor layer comprises a rear surface of the semiconductor substrate; and

the first front surface region and the second front surface region comprise regions on a surface of the gallium nitride-based compound semiconductor layer.

3. The light-emitting diode element of claim 1, further comprising a second insulating film, which is provided in a region of the second front surface region which is positioned around the through hole,

wherein the second electrode is provided on the second insulating film.

4. The light-emitting diode element of claim 1, wherein, when viewed in the direction perpendicular to the principal surface of the first semiconductor layer, the through hole is provided along one side of the first semiconductor layer, and the active layer is provided in a substantially square shape so as to be adjacent to a region of the first semiconductor layer in which the through hole is provided.

5. The light-emitting diode element of claim 1, wherein, when viewed in the direction perpendicular to the principal surface of the first semiconductor layer, the third electrode comprises third electrode portions disposed in the region overlapping the first electrode so that the third electrode portions are spaced apart from each other.

6. The light-emitting diode element of claim 1, wherein the through hole has a space inside surrounded by the conductor portion.

7. The light-emitting diode element of claim 1, further comprising a third insulating film, which is provided in a region of the rear surface of the first semiconductor layer which is positioned around the through hole,

wherein the third electrode is provided on a rear surface side of the third insulating film.

8. The light-emitting diode element of claim 1, wherein the first front surface region and the second front surface region comprise regions on an m-plane.

9. The light-emitting diode element of claim 1, wherein the first front surface region and the second front surface region comprise regions on a plane other than an m-plane.

16. A light-emitting diode device, comprising:

the light-emitting diode element of claim 1; and

a mounting base,

wherein the light-emitting diode element is disposed on the mounting base so that a side on which the first electrode and the second electrode are disposed faces the mounting base.

10. A light-emitting diode element, comprising:

a first semiconductor layer of a first conductivity type including a semiconductor substrate of the first conductivity type and a gallium nitride-based compound semiconductor layer, the semiconductor substrate having a principal surface and a rear surface, the gallium nitride-based compound semiconductor layer being formed on the principal surface of the semiconductor substrate;

a second semiconductor layer of a second conductivity type, which is provided at a principal surface of the gallium nitride-based compound semiconductor layer;

an active layer, which is positioned between the first semiconductor layer and the second semiconductor layer;

a first electrode, which is provided in a first region of a principal surface of the second semiconductor layer;

a first insulating film, which is provided on an inner wall of a through hole, the through hole penetrating through the first semiconductor layer, the second semiconductor layer, and the active layer and having openings in a second region of the principal surface of the second semiconductor layer and in the rear surface of the semiconductor substrate;

a conductor portion, which is provided on a surface of the first insulating film inside the through hole;

a second electrode, which is provided at the second region and is in contact with the conductor portion; and

a third electrode, which is provided on the rear surface of the semiconductor substrate and is in contact with the conductor portion, wherein;

when seen in a direction perpendicular to the principal surface of the first semiconductor layer, the third electrode is provided in a region that overlaps the first electrode; and

the light-emitting diode element further comprises a second insulating film which is provided in a region of the second region which is positioned around the through hole, and the second electrode is provided on the second insulating film.

11. The light-emitting diode element of claim 10, wherein, when viewed in the direction perpendicular to the principal surface of the first semiconductor layer, the third electrode comprises third electrode portions disposed in the region overlapping the first electrode so that the third electrode portions are spaced apart from each other.

12. The light-emitting diode element of claim 10, wherein the through hole has a space inside surrounded by the conductor portion.

13. The light-emitting diode element of claim 10, further comprising a third insulating film, which is provided in a region of the rear surface of the first semiconductor layer which is positioned around the through hole,

wherein the third electrode is provided on a rear surface side of the third insulating film.

14. The light-emitting diode element of claim 10, wherein the principal surface of the gallium nitride-based compound semiconductor layer comprises an m-plane.

15. The light-emitting diode element of claim 10, wherein the principal surface of the gallium nitride-based compound semiconductor layer comprises a plane other than an m-plane.

17. A light-emitting diode device, comprising:

the light-emitting diode element of claims 10; and

a mounting base,

wherein the light-emitting diode element is disposed on the mounting base so that a side on which the first electrode and the second electrode are disposed faces the mounting base.