GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE
First Claim
1. A group-III nitride semiconductor device comprising:
- a gallium nitride-based semiconductor light emitting layer;
a first contact layer provided on the light emitting layer;
a second contact layer provided on the first contact layer and in direct contact with the first contact layer; and
a metal electrode provided on the second contact layer and in direct contact with the second contact layer;
a gallium nitride-based semiconductor of the first contact layer being the same as a gallium nitride-based semiconductor of the second contact layer, the first contact layer and the second contact layer having a p-type conductivity,a p-type dopant concentration of the first contact layer being lower than a p-type dopant concentration of the second contact layer,an interface between the first contact layer and the second contact layer tilting at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis, the reference axis extending along a c-axis thereof,a wavelength of light emitted from the light emitting layer being in a range of 480 to 600 nm, andthe second contact layer having a thickness in a range of 1 to 50 nm.
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Abstract
A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.
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Citations
34 Claims
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1. A group-III nitride semiconductor device comprising:
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a gallium nitride-based semiconductor light emitting layer; a first contact layer provided on the light emitting layer; a second contact layer provided on the first contact layer and in direct contact with the first contact layer; and a metal electrode provided on the second contact layer and in direct contact with the second contact layer; a gallium nitride-based semiconductor of the first contact layer being the same as a gallium nitride-based semiconductor of the second contact layer, the first contact layer and the second contact layer having a p-type conductivity, a p-type dopant concentration of the first contact layer being lower than a p-type dopant concentration of the second contact layer, an interface between the first contact layer and the second contact layer tilting at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis, the reference axis extending along a c-axis thereof, a wavelength of light emitted from the light emitting layer being in a range of 480 to 600 nm, and the second contact layer having a thickness in a range of 1 to 50 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 25, 26, 27)
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13. A method of fabricating a group-III nitride semiconductor device, comprising the steps of:
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growing a light emitting layer, the light emitting layer comprising a gallium nitride-based semiconductor; growing a first contact layer on the light emitting layer, the first contact layer comprising a p-type gallium nitride-based semiconductor; after changing amount of p-type dopant supplied in the growth of the first contact layer, growing a second contact layer on the first contact layer, the second contact layer comprising a p-type gallium nitride-based semiconductor; and forming a metal electrode on the second contact layer, a p-type gallium nitride-based semiconductor of the first contact layer being the same as a p-type gallium nitride-based semiconductor of the second contact layer, amount of p-type dopant supplied to a growth reactor in the growth of the second contact layer being larger than amount of p-type dopant supplied to a growth reactor in the growth of the first contact layer, a growth temperature for the first contact layer and the second contact layer being higher than a growth temperature of an active layer in the light emitting layer, a difference between the growth temperature for the first contact layer and the second contact layer and the growth temperature for the active layer being in a range of 100 degrees Celsius to 350 degrees Celsius, the second contact layer being in direct contact with the metal electrode, the first contact layer being in direct contact with the second layer, an interface between the first contact layer and the second contact layer tilting at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis, the reference axis extending along a c-axis thereof, the light emitting layer emitting light, the light having a wavelength in a range of 480 to 600 nm, and the second contact layer has a thickness in a range of 1 to 50 nm. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 28, 29, 30, 31, 32, 33, 34)
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Specification