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Conductivity Based on Selective Etch for GaN Devices and Applications Thereof

  • US 20130011656A1
  • Filed: 07/26/2012
  • Published: 01/10/2013
  • Est. Priority Date: 01/27/2010
  • Status: Active Grant
First Claim
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1. A method for generating porous GaN, comprising:

  • (a) exposing GaN to an electrolyte;

    (b) coupling the GaN to one terminal of a power supply and an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; and

    (c) energizing the circuit to increase the porosity of at least a portion of the GaN.

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