Conductivity Based on Selective Etch for GaN Devices and Applications Thereof
First Claim
1. A method for generating porous GaN, comprising:
- (a) exposing GaN to an electrolyte;
(b) coupling the GaN to one terminal of a power supply and an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; and
(c) energizing the circuit to increase the porosity of at least a portion of the GaN.
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Accused Products
Abstract
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
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Citations
56 Claims
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1. A method for generating porous GaN, comprising:
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(a) exposing GaN to an electrolyte; (b) coupling the GaN to one terminal of a power supply and an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; and (c) energizing the circuit to increase the porosity of at least a portion of the GaN. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 51, 52, 53, 54)
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47. A method of manufacturing nanocrystals, comprising:
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(a) providing a material comprising at least one of GaN or InGaN with a thin n-type doped surface layer; (b) exposing the material to an electrolyte; (c) coupling the material to one terminal of a power supply and an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; (d) energizing the circuit to drive a current through the circuit, wherein the current acts to create a thin porous layer at a surface of the material; and
,(e) subjecting the porous layer to a mechanical disturbance to break the porous layer into a nanocrystals. - View Dependent Claims (48, 55)
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49. A method of manufacturing an electrode, comprising:
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(a) providing a material comprising at least one of GaN or InGaN with a thin n-type doped surface layer; (b) exposing the material to an electrolyte; (c) coupling the material to one terminal of a power supply and an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; and
,(d) energizing the circuit to drive a current through the material, wherein the current acts to create a thin porous layer on the surface to produce a structure suitable for use as an electrode for electrolysis, water splitting, or photosynthetic process applications. - View Dependent Claims (50, 56)
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Specification