SEMICONDUCTOR DEVICE, DETECTION METHOD AND PROGRAM
First Claim
1. A semiconductor device for detecting degradation which occurs in a semiconductor integrated circuit having a detection target circuit portion where a test is executed, comprising:
- a measurement unit that measures a temperature and a voltage of where the detection target circuit portion is;
a decision unit that judges whether the test is executed within an allowable test timing in the detection target circuit portion at each test operation frequency or not and decides a maximum test operation frequency, of where the detection target circuit is, at which the test can be executed; and
a calculation unit that converts the maximum test operation frequency decided by the decision unit based on the temperature and the voltage measured by the measurement unit into a maximum test operation frequency at a standard temperature and a standard voltage, and calculates, based on a converted maximum test operation frequency, a degradation amount which indicates degree of degradation;
wherein the semiconductor integrated circuit has a monitor block circuit that monitors a value used by the measurement unit to measure the temperature and the voltage;
the measurement unit has an estimation unit that estimates a temperature and a voltage of where the detection target circuit portion is, every time a test is executed, based on a monitored value by the monitor block circuit which operated at a temperature and a voltage of where the detection target circuit portion is; and
the calculation unit uses the temperature and the voltage estimated by the estimation unit as the temperature and the voltage measured by the measurement unit and converts the maximum test operation frequency decided by the decision unit into the maximum test operation frequency at the standard temperature and the standard voltage.
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Accused Products
Abstract
A semiconductor device and the like that can determine the performance of a semiconductor integrated circuit with higher accuracy even when test environment fluctuates. The semiconductor device detects degradation of the semiconductor integrated circuit, including measurement unit that measures temperature and voltage, decision unit that judges whether the test is executed within an allowable test timing in the detection target circuit portion at each test operation frequency and decides a maximum test operation frequency and calculation unit that converts a maximum test operation frequency into that at a standard temperature and voltage and calculates a degradation amount. The semiconductor integrated circuit has a monitor block circuit that monitors the values for the measurement unit to measure temperature and voltage. The measurement unit has estimation unit that estimates temperature and voltage of a detection target circuit portion based on the monitored values. The calculation unit uses the estimated temperature and voltage.
25 Citations
13 Claims
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1. A semiconductor device for detecting degradation which occurs in a semiconductor integrated circuit having a detection target circuit portion where a test is executed, comprising:
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a measurement unit that measures a temperature and a voltage of where the detection target circuit portion is; a decision unit that judges whether the test is executed within an allowable test timing in the detection target circuit portion at each test operation frequency or not and decides a maximum test operation frequency, of where the detection target circuit is, at which the test can be executed; and a calculation unit that converts the maximum test operation frequency decided by the decision unit based on the temperature and the voltage measured by the measurement unit into a maximum test operation frequency at a standard temperature and a standard voltage, and calculates, based on a converted maximum test operation frequency, a degradation amount which indicates degree of degradation; wherein the semiconductor integrated circuit has a monitor block circuit that monitors a value used by the measurement unit to measure the temperature and the voltage; the measurement unit has an estimation unit that estimates a temperature and a voltage of where the detection target circuit portion is, every time a test is executed, based on a monitored value by the monitor block circuit which operated at a temperature and a voltage of where the detection target circuit portion is; and the calculation unit uses the temperature and the voltage estimated by the estimation unit as the temperature and the voltage measured by the measurement unit and converts the maximum test operation frequency decided by the decision unit into the maximum test operation frequency at the standard temperature and the standard voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device for detecting variability which occurs in pluralities of same kinds of semiconductor integrated circuits where a test is executed, comprising:
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a measurement unit that measures a temperature and a voltage where the detection target circuit portion is; a decision unit that judges whether the test is executed within an allowable test timing in the detection target circuit portion at each test operation frequency or not and decides a maximum test operation frequency at which the test can be executed; and a calculation unit that converts the maximum test operation frequency decided by the decision unit based on the temperature and the voltage measured by the measurement unit into a maximum test operation frequency at a standard temperature and a standard voltage, and calculates, based on a converted maximum test operation frequency, a variability amount which indicates degree of variability; wherein the semiconductor integrated circuit has a monitor block circuit that monitors a value used by the measurement unit to measure the temperature and the voltage; the measurement unit has an estimation unit that estimates a temperature and a voltage of where the detection target circuit portion is, every time a test is executed, based on a monitored value by the monitor block circuit which operated at a temperature and a voltage of where the detection target circuit portion is; and the calculation unit uses the temperature and the voltage estimated by the estimation unit as the temperature and the voltage measured by the measurement unit and converts the maximum test operation frequency decided by the decision unit into the maximum test operation frequency at the standard temperature and the standard voltage.
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11. A detection method for detecting degradation which occurs in a semiconductor integrated circuit or variability which occurs in pluralities of same kinds of semiconductor integrated circuits,
wherein the characteristic of relation among an operation frequency, temperature and a voltage of a detection target circuit portion of the semiconductor integrated circuit is approximated by an approximation formula, the method comprising: -
measuring temperature and voltage, using a measurement unit; deciding a maximum test operation frequency at which a test can be executed within an allowable test timing in a detection target circuit portion of the semiconductor integrated circuit, using a decision unit; and calculating a maximum test operation frequency at a standard temperature and a standard voltage using the approximation formula, using the temperature, the voltage and the maximum test operation frequency and calculating, based on the maximum test operation frequency calculated, a degradation amount which indicates degree of degradation or a variability amount which indicates degree of variability, using a calculating unit. - View Dependent Claims (12, 13)
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Specification