SUBSTRATE PROCESSING APPARATUS

• US 20130014895A1
• Filed: 07/06/2012
• Published: 01/17/2013
• Est. Priority Date: 07/08/2011
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kawamata, Masaya, Honda, Masanobu, Kubota, Kazuhiro
• Granted Patent: US 9,460,893 B2
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: C23C 16/4558 Perforated rings
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.

Claims

1. A substrate processing apparatus for performing a process on a substrate disposed within a processing chamber by supplying a gas to the substrate, the apparatus comprising:

a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate,

wherein the gas introducing unit comprises;

a center gas inlet section having a multiple number of gas holes for a center gas to be supplied toward the center region of the substrate;

an edge gas inlet section having a multiple number of gas holes for an edge gas to be supplied toward the edge region of the substrate and surrounding the center gas inlet section; and

an edge gas discharging position adjusting unit configured to adjust a horizontal position or a vertical position of edge gas discharging openings from which the edge gas is discharged through the gas holes of the edge gas inlet section.

2. The substrate processing apparatus of claim 1,

wherein the edge gas discharging position adjusting unit is configured to adjust a vertical position of the edge gas discharging openings by providing a gas hole formation plate having gas holes communicating with the gas holes of the edge gas inlet section at a bottom surface of the edge gas inlet section.

3. The substrate processing apparatus of claim 2,

wherein the gas hole formation plate is detachably provided at the bottom surface of the edge gas inlet section, and the vertical position of the edge gas discharging openings is adjusted by varying a thickness of the gas hole formation plate.

4. The substrate processing apparatus of claim 2,

wherein the gas hole formation plate is provided at the bottom surface of the edge gas inlet section to be vertically movable, and the vertical position of the edge gas discharging openings is adjusted by vertically moving the gas hole formation plate.

5. The substrate processing apparatus of claim 1,

wherein the edge gas discharging position adjusting unit includes a multiple number of rows of gas holes annularly arranged in the edge gas inlet section from the inner side of the edge gas inlet section toward the outer-side thereof, and the horizontal position of the edge gas discharging openings is adjusted by selecting a row of the gas holes.

10. The substrate processing apparatus of claim 1,

wherein the diameter of the gas hole for the edge gas is smaller than the diameter of the gas hole for the center gas.

6. A substrate processing apparatus for performing a process on a substrate mounted on a mounting table within a processing chamber by supplying a gas to the substrate, the apparatus comprising:

a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate,

wherein the gas introducing unit comprises;

a center gas inlet section having a multiple number of gas holes for a center gas to be supplied toward the center region of the substrate;

an edge gas inlet section having a multiple number of gas holes for an edge gas to be supplied toward the edge region of the substrate and surrounding the center gas inlet section; and

an edge gas discharging position adjusting unit configured to adjust both a horizontal position and a vertical position of edge gas discharging openings from which the edge gas is discharged through the gas holes of the edge gas inlet section.

7. The substrate processing apparatus of claim 6,

wherein the edge gas discharging position adjusting unit includes a multiple number of rows of gas holes annularly arranged in the edge gas inlet section from the inner side of the edge gas inlet section toward the outer side thereof, and is configured to supply the edge gas by selecting a row of the gas holes,

the edge gas discharging position adjusting unit also includes a gas hole formation plate having gas holes respectively communicating with the gas holes of the edge gas inlet section, and the gas hole formation plate is provided at a bottom surface of the edge gas inlet section, and

the edge gas discharging position adjusting unit is configured to adjust both a vertical position and a horizontal position of the edge gas discharging openings.

8. The substrate processing apparatus of claim 7,

wherein the gas hole formation plate is detachable provided at the bottom surface of the edge gas inlet section, and the vertical position of the edge gas discharging openings is adjusted by varying a thickness of the gas hole formation plate.

9. The substrate processing apparatus of claim 7,

wherein the gas hole formation plate is provided at the bottom surface of the edge gas inlet section to be vertically movable, and the vertical position of the edge gas discharging openings is adjusted by vertically moving the gas hole formation plate.