LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS

• US 20130015425A1
• Filed: 07/11/2012
• Published: 01/17/2013
• Est. Priority Date: 07/12/2011
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Lin, Yi-Chieh, Lee, Rong-Ren
• Granted Patent: US 8,884,267 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer.

Claims

1. A light-emitting element, comprising:

a first active layer, generating a first light comprising a first dominant wavelength; and

a second active layer on the first active layer, generating a second light comprising a second dominant wavelength;

wherein a difference between the first dominant wavelength and the second dominant wavelength is 150 nm to 220 nm.

2. The light-emitting element of claim 1, wherein the first dominant wavelength is smaller or larger than the second dominant wavelength.

3. The light-emitting element of claim 1, wherein a wavelength of the first dominant wavelength is between 780 nm and 900 nm.

4. The light-emitting element of claim 1, wherein a wavelength of the second dominant wavelength is between 560 nm and 750 nm.

5. A light-emitting element, comprising:

a first active layer, comprising a first band gap; and

a second active layer on the first active layer, comprising a second band gap;

wherein a difference between the first band gap and the second band gap is between 0.3 eV and 0.5 eV.

6. The light-emitting element of claim 5, wherein the first band gap is smaller or larger than the second band gap.

7. The light-emitting element of claim 5, wherein the first active layer comprises a first quantum well and a second quantum well alternately stacked to form the first active layer.

8. The light-emitting element of claim 7, wherein the first quantum well comprises a first quantum-well band gap, a second quantum well comprises a second quantum-well band gap, and a difference between the first quantum-well band gap and the second quantum-well band gap is between 0.06 eV and 0.1 eV.

9. The light-emitting element of claim 5, wherein the second active layer comprises a third quantum well and a forth quantum well alternately stacked to form the second active layer.

10. The light-emitting element of claim 9, wherein the third quantum well comprises a third quantum-well band gap, a forth quantum well comprises a forth quantum-well band gap, and a difference between the third quantum-well band gap and the forth quantum-well band gap is between 0.06 eV and 0.1 eV.

11. The light-emitting element of claim 5, further comprising:

a substrate under the first active layer;

a first semiconductor layer between the first active layer and the substrate;

a second semiconductor layer between the first active layer and the second active layer;

a third semiconductor layer between the second semiconductor layer and the second active layer; and

a forth semiconductor layer on the second active layer.

12. The light-emitting element of claim 11, wherein a material of the substrate is selected from a group consisting of GaAs, SiC, and sapphire.

13. The light-emitting element of claim 11, wherein materials of the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and/or the forth semiconductor layer comprise more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se.

14. The light-emitting element of claim 11, further comprising a tunneling layer or a bonding layer between the second semiconductor layer and the third semiconductor layer.

15. The light-emitting element of claim 14, wherein a material of the tunneling layer comprises more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se.

16. The light-emitting element of claim 14, wherein a material of the bonding layer is selected from a group consisting of ITO, InO, SnO, CTO, ATO, ZnO, MgO, AlGaAs, GaN, GaP, AZO, ZTO, GZO, IZO, and Ta₂O₅.

17. The light-emitting element of claim 5, wherein a material of the first active layer and/or the second active layer comprise more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se.

18. A light-emitting element, comprising:

a first active layer, generating an invisible light; and

a second active layer on the first active layer, generating a visible light.

19. The light-emitting element of claim 18, wherein the first active layer comprises a first band gap, the second active layer comprises a second band gap, and the first band gap is smaller or larger than the second band gap.

20. The light-emitting element of claim 18, wherein a difference between the wavelength of the visible light and the invisible light is between 150 nm and 220 nm.