INTEGRATED CIRCUIT (IC) TEST PROBE
First Claim
1. A method of forming test probes, said method comprising:
- forming a plurality of vias through a semiconductor layer, said plurality of vias in said semiconductor layer being a test head;
etching said semiconductor layer, said plurality of vias extending above the surface of said etched semiconductor layer, portions of vias above said surface being probe tips; and
mounting said test head in a test fixture.
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Accused Products
Abstract
A test probe head for probing integrated circuit (IC) chips and method of making test heads. The test head includes an array of vias (e.g., annular vias or grouped rectangular vias) through, and exiting one surface of, a semiconductor layer, e.g., a silicon layer. The vias, individual test probe tips, may be on a pitch at or less than fifty microns (50 μm). The probe tips may be stiffened with SiO2 (and optionally silicon) extending along the sidewalls. A redistribution layer connects individual test probe tips externally. The probe tips may be capped with a hardening cap that also caps stiffening SiO2 and silicon along the tip sidewall.
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Citations
25 Claims
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1. A method of forming test probes, said method comprising:
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forming a plurality of vias through a semiconductor layer, said plurality of vias in said semiconductor layer being a test head; etching said semiconductor layer, said plurality of vias extending above the surface of said etched semiconductor layer, portions of vias above said surface being probe tips; and mounting said test head in a test fixture. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming test probe heads for probing integrated circuit (IC) chips, said method comprising:
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etching an array of vias to a selected depth in a surface of a semiconductor wafer, each of said vias in said array terminating above the opposite surface of said wafer; insulating the sidewalls of said vias; filling said vias with conductive material; etching said semiconductor wafer at said array, said semiconductor wafer being sub-etched such that said array vias extend from said sub-etched surface, sub-etched via portions being individual test probe tips; separating said array from said wafer, said separated array being a test head; and mounting said test head in a test fixture. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A test probe head comprising:
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a semiconductor layer; an array of vias extending though said semiconductor layer, exiting one surface of said semiconductor layer, individual via portions above said surface being individual test probe tips; and a redistribution layer connecting individual test probes externally. - View Dependent Claims (17, 18, 19, 20, 21, 23, 24, 25)
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22. A test probe head for probing integrated circuit (IC) chips, said test head comprising:
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a silicon layer; an array of metal vias on a pitch at or less than fifty microns (50 μ
m) extending though and exiting one surface of said silicon layer, via portions exiting said one surface being individual test probe tips;silicon extending along the sidewalls of said test probe tips; and a redistribution layer connecting individual test probes externally.
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Specification