SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20130015483A1
• Filed: 07/12/2012
• Published: 01/17/2013
• Est. Priority Date: 07/12/2011
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HIGUCHI, Kazuhito, OBATA, Susumu, SHIMOKAWA, Kazuo
• Application Number:
  US13/547,777
• Publication Number:
  US 20130015483A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a reflective layer, a first metal pillar, a second metal pillar, and a sealing unit. The stacked body includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the second portion and the second semiconductor layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers a side surface of the stacked body and insulative and reflective. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first and second metal pillars to leave end portions of the first and second metal pillars exposed.

Claims

1. A semiconductor light emitting device, comprising:

a stacked body including

a first semiconductor layer of a first conductivity type having a first portion and a second portion juxtaposed with the first portion,

a second semiconductor layer of a second conductivity type, and

a light emitting unit provided between the second portion and the second semiconductor layer,

the stacked body having a first major surface on a side of the first semiconductor layer and a second major surface on a side of the second semiconductor layer;

a first electrode provided on a surface of the first portion on a side of the second major surface;

a second electrode provided on a surface of the second semiconductor layer on a side of the second major surface;

a reflective layer covering a side surface of the stacked body, the reflective layer being insulative and reflective with respect to an emitted light emitted from the light emitting unit;

a first metal pillar extending in a first direction from the first semiconductor layer toward the second semiconductor layer, the first metal pillar being electrically connected to the first electrode;

a second metal pillar extending in the first direction, the second metal pillar being electrically connected to the second electrode; and

a sealing unit sealing the first metal pillar and the second metal pillar to leave an end portion of the first metal pillar and an end portion of the second metal pillar exposed.

2. The device according to claim 1, wherein a reflectance of the reflective layer with respect to the emitted light is not less than a reflectance of the sealing unit with respect to the emitted light.

3. The device according to claim 1, wherein the sealing unit is reflective with respect to the emitted light.

4. The device according to claim 1, wherein the sealing unit includes an insulative resin.

5. The device according to claim 4, wherein the sealing unit includes at least one selected from the group consisting of ZnO, TiO₂, ZrO₂, Al₂O₃, MgO, CaTiO₂, BaSO₄, ZnS and CaCO₃.

6. The device according to claim 1, wherein

the stacked body has an outer edge side surface of an outer edge when viewed in the first direction, and a boundary side surface positioned between the first portion and the second portion, and

the reflective layer covers at least a portion of the outer edge side surface and at least a portion of the boundary side surface.

7. The device according to claim 1, wherein the reflective layer has a portion between the first electrode and the first metal pillar.

8. The device according to claim 7, wherein the reflective layer further has a portion between the second electrode and the second metal pillar.

9. The device according to claim 1, wherein

an area of the first metal pillar when viewed in the first direction is larger than an area of the first electrode, and

an area of the second metal pillar when viewed in the first direction is larger than an area of the second electrode.

10. The device according to claim 1, wherein the reflective layer includes at least one selected from the group consisting of zinc oxide (ZnO), titanium dioxide (TiO₂), zirconium oxide (ZrO₂), aluminum oxide Al₂O₃), magnesium oxide (MgO), calcium titanate (CaTiO₂), barium sulfate (BaSO₄), zinc sulfide (ZnS), and calcium carbonate (CaCO₃).

11. The device according to claim 1, wherein the reflective layer includes a plurality of first dielectric layers and a plurality of second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked and the first dielectric layers and the second dielectric layers have mutually different refractive indexes.

12. The device according to claim 1, wherein

the reflective layer covers an edge portion of the first electrode, a side surface of the first electrode, an edge portion of the second electrode, and a side surface of the second electrode,

the first metal pillar covers a portion of the reflective layer, and

the second metal pillar covers a portion of the reflective layer.

13. The device according to claim 1, wherein the sealing unit covers at least a portion of the reflective layer.

14. The device according to claim 1, further comprising a foundation insulating layer,

at least a portion of the foundation insulating layer being provided between the reflective layer and at least a portion of an outer edge side surface of an outer edge of the stacked body when viewed in the first direction and between the reflective layer and at least a portion of a boundary side surface of the stacked body positioned between the first portion and the second portion, and

a reflectance of the foundation insulating layer with respect to the emitted light being lower than a reflectance of the reflective layer with respect to the emitted light.

15. The device according to claim 14, wherein

the foundation insulating layer covers a portion of the first electrode and a portion of the second electrode, and

the reflective layer covers a portion of the foundation insulating layer covering the portion of the first electrode and covers a portion of the foundation insulating layer covering the portion of the second electrode.

16. The device according to claim 14, wherein the reflective layer covers a side surface of the foundation insulating layer.

17. The device according to claim 14, wherein the foundation insulating layer includes at least one of silicon oxide and silicon nitride.

18. The device according to claim 14, wherein the foundation insulating layer includes at least one of polyimide, polybenzoxazole (PBO), and a silicone material.

19. The device according to claim 1, further comprising a covering layer covering the reflective layer.

20. The device according to claim 19, wherein the covering layer is insulative.