Stacked Half-Bridge Power Module

• US 20130015495A1
• Filed: 07/21/2011
• Published: 01/17/2013
• Est. Priority Date: 07/11/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Hauenstein, Henning M.
• Granted Patent: US 8,987,777 B2
• Time in Patent Office: Days
• US Class Current: 257/140
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 25/071 the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/074 Stacked arrangements of non-apertured devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 7/209 Heat transfer by conduction from internal heat source to heat radiating structure H05K7/20909 takes precedence

Abstract

According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode.

Claims

1. A stacked half-bridge power module comprising:

a high side device having a high side power terminal coupled to a high side substrate;

a low side device having a low side power terminal coupled to a low side substrate;

said high side and low side devices being stacked on opposite sides of a common conductive interface;

said common conductive interface electrically, mechanically, and thermally coupling a high side output terminal of said high side device to a low side output terminal of said low side device.

2. The stacked half-bridge power module of claim 1, wherein said common conductive interface is a metal or a metal alloy.

3. The stacked half-bridge power module of claim 1, wherein said common conductive interface forms a heat sink for said high side device and said low side device.

4. The stacked half-bridge power module of claim 1, wherein said high side device and said low side device each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode.

5. The stacked half-bridge power module of claim 1, wherein said high side device is on said high side substrate and said low side device is on said low side substrate.

6. The stacked half-bridge power module of claim 1, wherein said high side substrate and said low side substrate are thermally conductive.

7. The stacked half-bridge power module of claim 1, wherein said high side substrate comprises a high side conductive layer that is electrically insulated from said high side device and said low side substrate comprises a low side conductive layer that is electrically insulated from said low side device.

8. The stacked half-bridge power module of claim 1, wherein said low side device has a gate coupled to said low side substrate.

9. The stacked half-bridge power module of claim 1, wherein said high side output terminal is formed by at least one die stacked on one side of said common conductive interface and said low side output terminal is formed by at least another die stacked on another side of said common conductive interface that is opposite to said one side.

10. The stacked half-bridge power module of claim 1, wherein said high side device is sintered to said high side substrate.

11. A stacked half-bridge IGBT/diode power module comprising:

a high side IGBT/diode device having a collector terminal coupled to a high side substrate;

a low side IGBT/diode device having an emitter terminal coupled to a low side substrate;

said high side IGBT/diode device and said low side IGBT/diode device being stacked on opposite sides of a common conductive interface;

said common conductive interface electrically, mechanically, and thermally coupling an emitter/anode terminal of said high side IGBT/diode device to a collector/cathode terminal of said low side IGBT/diode device.

12. The stacked half-bridge IGBT/diode power module of claim 11, wherein said common conductive interface is a metal or a metal alloy.

13. The stacked half-bridge IGBT/diode power module of claim 11, wherein said common conductive interface forms a heat sink of said high side IGBT/diode device and said low side IGBT/diode device.

14. The stacked half-bridge IGBT/diode power module of claim 11, wherein said high side IGBT/diode device and said low side IGBT/diode device each include an IGBT in parallel with a diode.

15. The stacked half-bridge IGBT/diode power module of claim 11, wherein said high side IGBT/diode device is on said high side substrate and said low side IGBT/diode device is on said low side substrate.

16. The stacked half-bridge IGBT/diode power module of claim 11, wherein said high side substrate and said low side substrate are thermally conductive.

17. The stacked half-bridge IGBT/diode power module of claim 11, wherein said high side substrate comprises a high side conductive layer that is electrically insulated from said high side IGBT/diode device and said low side substrate comprises a low side conductive layer that is electrically insulated from said low side IGBT/diode device.

18. The stacked half-bridge IGBT/diode power module of claim 11, wherein said collector terminal is a collector/cathode terminal of said high side IGBT/diode device and said emitter terminal is an emitter/anode terminal of said low side IGBT/diode device.

19. The stacked half-bridge IGBT/diode power module of claim 11, wherein said emitter/anode terminal is formed by at least one die stacked on one side of said common conductive interface and said collector/cathode terminal is formed by at least another die stacked on another side of said common conductive interface that is opposite to said one side.

20. The stacked half-bridge IGBT/diode power module of claim 11, wherein said high side IGBT/diode device is sintered to said high side substrate.