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Composite Semiconductor Device with a SOI Substrate Having an Integrated Diode

  • US 20130015499A1
  • Filed: 07/09/2012
  • Published: 01/17/2013
  • Est. Priority Date: 07/15/2011
  • Status: Active Grant
First Claim
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1. A composite semiconductor device comprising:

  • a semiconductor on insulator (SOI) substrate including a diode having an anode and a cathode;

    a transition body formed over said diode;

    a transistor formed over said transition body, said transistor including a source and a drain;

    said source being connected to said diode by a first electrical connector;

    said drain being connected to said diode by a second electrical connector.

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