Composite Semiconductor Device with a SOI Substrate Having an Integrated Diode

• US 20130015499A1
• Filed: 07/09/2012
• Published: 01/17/2013
• Est. Priority Date: 07/15/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Briere, Michael A.
• Granted Patent: US 9,281,388 B2
• Time in Patent Office: Days
• US Class Current: 257/191
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/0694 comprising components formed on opposite sides of a semiconductor substrate
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a semiconductor on insulator (SOI) substrate including a diode and an insulator layer. The composite semiconductor device also includes a transition body formed over the diode, and a transistor formed over the transition body. The diode is connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.

Claims

1. A composite semiconductor device comprising:

a semiconductor on insulator (SOI) substrate including a diode having an anode and a cathode;

a transition body formed over said diode;

a transistor formed over said transition body, said transistor including a source and a drain;

said source being connected to said diode by a first electrical connector;

said drain being connected to said diode by a second electrical connector.

2. The composite semiconductor device of claim 1, wherein said transition body is compositionally graded.

3. The composite semiconductor device of claim 1, wherein said transistor comprises a group III-V high electron mobility transistor (HEMT).

4. The composite semiconductor device of claim 1, wherein said diode is a PN junction diode.

5. The composite semiconductor device of claim 4, wherein said PN junction diode is lifetime engineered to reduce a recovery time for a stored charge of said PN junction diode.

6. The composite semiconductor device of claim 1, wherein said diode is a PIN diode.

7. The composite semiconductor device of claim 1, wherein said diode comprises a group IV diode.

8. The composite semiconductor device of claim 1, wherein said first electrical connector connects an anode of said diode to a source of said transistor and said second electrical connector connects a cathode of said diode to a drain of said transistor.

9. The composite semiconductor device of claim 1, wherein a breakdown voltage of said transistor is greater than a breakdown voltage of said diode.

10. The composite semiconductor device of claim 1, wherein said first and second electrical connectors are implemented using respective first and second through-semiconductor vias.

11. The composite semiconductor device of claim 10, wherein at least one of said first and second through-semiconductor vias includes a sidewall dielectric.

12. The composite semiconductor device of claim 1, wherein said SOI substrate has an electrode for at least one of said cathode and said anode terminated on a backside contact of said composite semiconductor device.

13. The composite semiconductor device of claim 1, wherein said diode is connected across said transistor on one side by a through-semiconductor via, and on another side by an external electrical connector.

14. The composite semiconductor device of claim 1, wherein said diode is formed over an insulator layer of said SOI substrate.

15. The composite semiconductor device of claim 1, wherein said diode is formed under an insulator layer of said SOI substrate.

16. A composite semiconductor device comprising:

a semiconductor on insulator (SOI) substrate including a group IV diode having an anode and a cathode;

a group III-V transition body formed over said group IV diode said group III-V transition body including a plurality of group III-V material layers;

a group III-V transistor formed over said group III-V transition body, said group III-V transistor including a source and a drain;

said source being connected to said group IV diode by a first electrical connector;

said drain being connected to said group IV diode by a second electrical connector.

17. The composite semiconductor device of claim 16, wherein said group III-V transition body is compositionally graded.

18. The composite semiconductor device of claim 16, wherein said group III-V transistor comprises a III-Nitride high electron mobility transistor (HEMT).

19. The composite semiconductor device of claim 16, wherein said group IV diode is a PN junction diode.

20. The composite semiconductor device of claim 19, wherein said PN junction diode is lifetime engineered to reduce a recovery time for a stored charge of said PN junction diode.

21. The composite semiconductor device of claim 16, wherein said group IV diode is a PIN diode.

22. The composite semiconductor device of claim 16, wherein said first electrical connector connects an anode of said group IV diode to a source of said group III-V transistor and said second electrical connector connects a cathode of said group IV diode to a drain of said group III-V transistor.

23. The composite semiconductor device of claim 16, wherein a breakdown voltage of said group III-V transistor is greater than a breakdown voltage of said group IV diode.

24. The composite semiconductor device of claim 16, wherein said first and second electrical connectors are implemented using respective first and second through-semiconductor vias.

25. The composite semiconductor device of claim 24, wherein at least one of said first and second through-semiconductor via includes a sidewall dielectric.

26. The composite semiconductor device of claim 16, wherein said SOI substrate has an electrode for at least one of said cathode and said anode terminated on a backside contact of said composite semiconductor device.

27. The composite semiconductor device of claim 16, wherein said group IV diode is connected across the group III-V transistor on one side by a through-semiconductor via, and on another side by an external electrical connector.

28. The composite semiconductor device of claim 16, wherein said group IV diode is formed over an insulator layer of said SOT substrate.

29. The composite semiconductor device of claim 16, wherein said group IV diode is formed under an insulator layer of said SOI substrate.