CAPACITANCE-TYPE DETECTING DEVICE

• US 20130015865A1
• Filed: 07/12/2012
• Published: 01/17/2013
• Est. Priority Date: 07/13/2011
• Status: Active Grant

• Current Assignee: Alps Alpine Co., Ltd.
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Izumi, Hiroshi
• Granted Patent: US 9,213,453 B2
• Time in Patent Office: Days
• US Class Current: 324/679
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 2203/04107 Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
• CPC Class Codes: G06F 2203/04111 Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
• CPC Class Codes: G06F 3/0443 using a single layer of sensing electrodes
• CPC Class Codes: G06F 3/0446 using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes

Abstract

A capacitance-type detecting device according to an embodiment of the invention includes a plurality of detecting electrodes that are provided on a sensor substrate such that capacitance is formed between adjacent electrodes. Capacitance formed in a corner detection region in which the detection sensitivity of the sensor substrate is relatively low is more than that formed in a central detection region in which the detection sensitivity is relatively high.

Claims

1. A capacitance-type detecting device comprising:

a plurality of detecting electrodes provided in a detection target region such that capacitance is formed between adjacent electrodes,

wherein capacitance in a low sensitivity region in which detection sensitivity of the detection target region is relatively low is more than capacitance in a high sensitivity region in which the detection sensitivity is relatively high.

2. The capacitance-type detecting device according to claim 1,

wherein capacitance formed at the edge of the detection target region is more than capacitance formed at the center of the detection target region.

3. The capacitance-type detecting device according to claim 1,

wherein capacitance formed at both ends of the detection target region in an X-axis direction and capacitance formed at both ends in a Y-axis direction perpendicular to the X-axis direction are more than capacitance formed at the center in the X-axis direction and the Y-axis direction.

4. The capacitance-type detecting device according to claim 1,

wherein the area of the detecting electrode in the low sensitivity region is greater than the area of the detecting electrode in the high sensitivity region.

5. The capacitance-type detecting device according to claim 1,

wherein the length of the outer circumference of the detecting electrode in the low sensitivity region is greater than the length of the outer circumference of the detecting electrode in the high sensitivity region.

6. The capacitance-type detecting device according to claim 1, further comprising:

a sensor substrate on which the plurality of detecting electrodes are provided; and

a coating material that is provided on the sensor substrate and covers the detecting electrodes,

wherein capacitance formed in a region in which the thickness of the coating material is relatively large is more than capacitance formed in a region in which the thickness of the coating material is relatively small.

7. The capacitance-type detecting device according to claim 1,

wherein a ground electrode is provided in the high sensitivity region.