Wafer Inspection

• US 20130016346A1
• Filed: 07/09/2012
• Published: 01/17/2013
• Est. Priority Date: 07/12/2011
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Romanovsky, Anatoly, Kavaldjiev, Daniel, Biellak, Stephen, Maleev, Ivan, Yuditsky, Yury, Woll, Dirk
• Granted Patent: US 9,279,774 B2
• Time in Patent Office: Days
• US Class Current: 356/237.5
• CPC Class Codes: G01N 21/47 Scattering, i.e. diffuse reflection G01N21/25, G01N21/41 take precedence G01N21/55 takes precedence
• CPC Class Codes: G01N 21/8806 Specially adapted optical and illumination features
• CPC Class Codes: G01N 21/8851 Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges G01N21/8806 and G01N21/93 - G01N21/95692 take precedence; optical measurement of dimensions G01B11/00; optical scanning G02B26/10; image transformation G06T3/00; computerised image enhancement G06T5/00; image processing per se for flaw detection G06T7/0002
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

Systems configured to inspect a wafer are provided.

Claims

1. A system configured to inspect a wafer, comprising:

an illumination subsystem configured to simultaneously form multiple illumination areas on the wafer with substantially no illumination flux between each of the areas;

a scanning subsystem configured to scan the multiple illumination areas across the wafer;

a collection subsystem configured to simultaneously and separately image light scattered from each of the areas onto two or more sensors, wherein characteristics of the two or more sensors are selected such that the scattered light is not imaged into gaps between the two or more sensors, and wherein the two or more sensors generate output responsive to the scattered light; and

a computer subsystem configured to detect defects on the wafer using the output of the two or more sensors.

2. The system of claim 1, wherein each of the multiple illumination areas has a rectangular shape on the wafer.

3. The system of claim 1, wherein the illumination subsystem forms the multiple illumination areas on the wafer using multiple light beams generated by multiple light sources.

4. The system of claim 1, wherein the illumination subsystem forms the multiple illumination areas on the wafer using multiple light beams generated from a single light beam.

5. The system of claim 1, wherein the multiple illumination areas do not overlap with each other on the wafer.

6. The system of claim 1, further comprising an optical element configured to simultaneously and separately divide the light scattered from each of the areas collected in different segments of a collection numerical aperture of the collection subsystem, wherein the two or more sensors are further configured to detect one of the different segments, and wherein the system further comprises another two or more sensors configured to detect another of the different segments.

7. The system of claim 6, wherein the system is further configured to alter or replace the optical element depending on the one of the different segments that is to be detected by the two or more sensors and the other of the different segments that is to be detected by the other two or more sensors.

8. The system of claim 1, further comprising an optical element configured to simultaneously and separately divide the light scattered from each of the areas collected in different segments of a collection numerical aperture of the collection subsystem, wherein the two or more sensors are further configured to detect one of the different segments using one portion of the two or more sensors and to detect another of the different segments using a different portion of the two or more sensors, and wherein the one portion and the other portion of the two or more sensors do not overlap with each other and are not contiguous on the two or more sensors.

9. The system of claim 1, wherein the collection subsystem comprises a scattered light collector having a resolution that is not fully diffraction-limited.

10. The system of claim 1, further comprising an additional two or more sensors that include image intensifiers, wherein the collection subsystem is further configured to simultaneously and separately image the light scattered from each of the areas to the additional two or more sensors, wherein the additional two or more sensors generate additional output responsive to the scattered light, and wherein the computer subsystem is further configured to detect the defects on the wafer using the additional output instead of the output when sensor electronic noise dominates total channel noise in the two or more sensors.

11. The system of claim 1, further comprising an additional two or more sensors that are configured for photon counting, wherein the collection subsystem is further configured to simultaneously and separately image the light scattered from each of the areas to the additional two or more sensors, wherein the additional two or more sensors generate additional output responsive to the scattered light, and wherein the computer subsystem is further configured to detect the defects on the wafer using the additional output.

12. The system of claim 1, wherein the illumination subsystem comprises a frequency conversion laser, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, and wherein the pulses of light directed to the areas on the wafer do not vary spatially over the duration of the pulses of light and have substantially constant intensity over the duration of the pulses of light.

13. The system of claim 12, wherein the illumination subsystem further comprises a beam shaping optical element coupled to the laser.

14. The system of claim 1, wherein the illumination subsystem comprises a frequency conversion laser, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, and wherein the pulses of light directed to the areas on the wafer have substantially constant intensity over the duration of the pulses of light.

15. The system of claim 1, further comprising a micro-electro-mechanical system-based optical switching device positioned between the collection subsystem and the two or more sensors.

16. The system of claim 15, further comprising an additional two or more sensors, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, wherein the light scattered from each of the areas comprises pulses of scattered light, and wherein the optical switching device is configured to direct a first set of the pulses of scattered light generated by a first set of the pulses of light to the two or more sensors and a second set of the pulses of scattered light generated by a second set of the pulses of light, subsequent to the first set of the pulses of light, to the additional two or more sensors.

17. The system of claim 15, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, wherein the light scattered from each of the areas comprises pulses of scattered light, wherein the optical switching device is further configured to simultaneously and separately divide the pulses of scattered from each of the areas collected in different segments of a collection numerical aperture of the collection subsystem, and wherein the optical switching device is further configured to direct only one of the different segments of a first set of the pulses of scattered light generated by a first set of the pulses of light to the two or more sensors and then to direct only another one of the different segments of a second set of the pulses of the scattered light generated by a second set of the pulses of light, subsequent to the first set of pulses of light, to the two or more sensors.

18. The system of claim 1, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, wherein the light scattered from each of the areas comprises pulses of scattered light, and wherein the two or more sensors are synchronized in time relative to the pulses of light to detect only the pulses of scattered light with predetermined arrival times.

19. The system of claim 18, wherein the pulses of scattered light with the predetermined arrival times comprise fluorescence or photoluminescence.

20. The system of claim 1, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, wherein the light scattered from each of the areas comprises pulses of scattered light, wherein the scanning subsystem is further configured to scan the pulses of light across the wafer by rotating the wafer, and wherein when the pulses of light are being scanned across a center region of the wafer, the illumination subsystem is further configured to simultaneously direct the pukes of light to the multiple illumination areas on the wafer less often than when the pulses of light are being scanned across the wafer outside of the center region.

21. The system of claim 1, wherein the illumination subsystem is further configured to simultaneously form the multiple illumination areas using pulses of light, wherein the light scattered from each of the areas comprises pulses of scattered light, wherein the scanning subsystem is further configured to scan the pulses of light across the wafer by rotating and translating the wafer, wherein the two or more sensors comprise area sensors, wherein when the pulses of light are being scanned across a center region of the wafer, the scanning subsystem scans the pulses of light across the wafer in one or more non-curved lines, and wherein when the pulses of light are being scanned across the wafer outside of the center region, the scanning subsystem scans the pulses of light across the wafer in a spiral fashion.

22-100. -100. (canceled)