Laser Diode Assembly and Method for Producing a Laser Diode Assembly
First Claim
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1. A laser diode arrangement comprising:
- at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer, wherein the laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate,wherein the intermediate layer is arranged between the laser stacks, andwherein the active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.
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Abstract
A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.
43 Citations
16 Claims
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1. A laser diode arrangement comprising:
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at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer, wherein the laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate, wherein the intermediate layer is arranged between the laser stacks, and wherein the active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for producing a laser diode arrangement, comprising the steps of:
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providing at least one semiconductor substrate; epitaxially growing a first single light source, comprising a first laser stack (30), a first n-contact layer and a first p-contact layer; depositing a first dielectric layer on a partial region of the first p-contact layer;
epitaxially growing an intermediate layer on the first p-contact layer epitaxially growing at least one second single light source, comprising a second laser stack, a second n-contact layer and a second p-contact layer;depositing a second dielectric layer on a partial region of the second p-contact layer; removing the at least two dielectric layers by means of etching or lift-off in order to expose contact surfaces; and depositing contacts on the exposed contact surfaces and on the exposed contact layer furthest away from the substrate. - View Dependent Claims (15)
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16. A laser diode arrangement comprising:
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a semiconductor substrate, having at least two laser stacks based on the material system AlInGaN, each having an active zone and having at least one intermediate layer, wherein the laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate, the intermediate layer is arranged between the laser stacks, the active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack, each laser stack with the associated active zone has a laser diode, the active zones are designed such that laser diodes from different laser stacks emit electromagnetic radiation in wavelength ranges differing from one another, the layer facing the semiconductor substrate, which layer adjoins the active zone, is an n-waveguide and the layer facing away from the semiconductor substrate, which layer adjoins the active zone, is a p-waveguide, or vice versa, and a current shield is provided between two laser stacks.
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Specification