SOLENOID INDUCTOR FOR FREQUENCY SYNTHESIZER IN DIGITAL CMOS PROCESS

• US 20130020676A1
• Filed: 01/06/2011
• Published: 01/24/2013
• Est. Priority Date: 01/06/2010
• Status: Abandoned Application

• Current Assignee: Silicon Harmony Co., Ltd.
• Original Assignee: Silicon Harmony Co., Ltd.
• Inventors: Nam, Chul
• Application Number:
  US13/520,877
• Publication Number:
  US 20130020676A1
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/002 Details of via holes for interconnecting the layers
• CPC Class Codes: H01F 2017/004 with the coil helically wound around an axis without a core
• CPC Class Codes: H01F 2017/008 Electric or magnetic shielding of printed inductances

Abstract

The present invention relates to a solenoid inductor for a frequency synthesizer in a digital CMOS process. The solenoid inductor includes: a plurality of wiring metals configured in a solenoid structure with a given width wherein the wiring metals are stacked at two side regions in a vertical direction; and wiring metal connection means connecting the stacked side regions of the individual wiring metals in a vertical direction, wherein a given number of lower layer wiring metals among the wiring metals are connected through corresponding wiring metal connection means so as to completely overlap. Hence, by using a solenoid inductor to implement a frequency synthesizer operating at high frequency bands of 4 to 5 GHz or higher in a digital CMOS process, a frequency synthesizer operating at several GHz frequencies, which has been realized only in an RF CMOS process, can be implemented.

Claims

1. A solenoid inductor for a frequency synthesizer in a digital CMOS process, comprising:

a plurality of wiring metals configured in a solenoid structure with a given width wherein the wiring metals are stacked at two side regions in a direction perpendicular to a substrate; and

wiring metal connection means connecting the stacked side regions of the individual wiring metals in a vertical direction,

wherein a given number of lower layer wiring metals among the wiring metals are connected through corresponding wiring metal connection means so as to completely overlap.

2. The solenoid inductor of claim 1, wherein the wiring metals include first and subsequent wiring metals and a top wiring metal stacked at two side regions in a perpendicular direction.

3. The solenoid inductor of claim 2, wherein a polysilicon pattern is formed under the first wiring metal to prevent leakage of magnetic flux to the substrate.

4. The solenoid inductor of claim 2, wherein the first wiring metal and the second wiring metal stacked on the first wiring metal are connected through wiring metal connection means between the first and second wiring metals so as to completely overlap each other.

5. The solenoid inductor of claim 2, wherein the first wiring metal, the second wiring metal stacked on the first wiring metal and the third wiring metal stacked on the second wiring metal are connected through wiring metal connection means between the first and second wiring metals and between the second and third wiring metals so as to completely overlap each other.

6. A solenoid inductor for a frequency synthesizer in a digital CMOS process, comprising:

a plurality of wiring metals configured in a solenoid structure with a given width, wherein the wiring metals are stacked at two side regions in a direction perpendicular to a substrate; and

wiring metal connection means connecting the stacked side regions of the individual wiring metals in a vertical direction,

wherein the wiring metals include fourth and subsequent wiring metals and a top wiring metal that are configured in a solenoid structure with a coil wound in a direction parallel to the substrate, magnetic flux of the solenoid inductor is directed in a direction horizontal to the substrate, and first to third wiring metals stacked to form the frequency synthesizer are placed under the fourth wiring metal of the solenoid inductor.