POWER MODULE PACKAGING WITH DOUBLE SIDED PLANAR INTERCONNECTION AND HEAT EXCHANGERS
First Claim
1. A power module package comprising:
- a first insulated gate bipolar transistor (IGBT) semiconductor die and a first diode semiconductor die spaced apart from said first IGBT semiconductor die, wherein said first IGBT semiconductor die and said first diode semiconductor die form a first planar power switch unit;
a second IGBT semiconductor die and a second diode semiconductor die spaced apart from said second IGBT semiconductor die, wherein said second IGBT semiconductor die and said second diode semiconductor die form a second planar power switch unit, wherein said first planar power switch unit and said second planar power switch unit are arranged in a planar, one phase leg configuration and said first planar power switch unit is oriented in a face-up configuration relative to said plane of said one phase leg configuration and said second planar power switch unit is oriented in a face-down configuration relative to said plane;
a pair of direct bonded copper (DBC) substrates each having a patterned inner surface wherein a first of said pair of DBC substrates is directly bonded to a top side and a second of said pair of DBC substrates is directly bonded to a bottom side of said planar one phase leg configuration of said first planar power switch unit and said second planar power switch unit to form a sandwich structure, and wherein said patterned inner surface of each of said pair of DBC substrates is attached and aligned with semiconductor die pads of said first planar power switch unit and said second planar power switch unit;
a substrate attachment layer on an outer surface of each of said pair of DBC substrates, said outer surfaces being opposite said patterned inner surface of each of said pair of DBC substrates; and
each of two heat exchangers being directly bonded to said outer surface of each of said pair of DBC substrates by each of said substrate attachment layers.
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Accused Products
Abstract
A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.
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Citations
21 Claims
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1. A power module package comprising:
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a first insulated gate bipolar transistor (IGBT) semiconductor die and a first diode semiconductor die spaced apart from said first IGBT semiconductor die, wherein said first IGBT semiconductor die and said first diode semiconductor die form a first planar power switch unit; a second IGBT semiconductor die and a second diode semiconductor die spaced apart from said second IGBT semiconductor die, wherein said second IGBT semiconductor die and said second diode semiconductor die form a second planar power switch unit, wherein said first planar power switch unit and said second planar power switch unit are arranged in a planar, one phase leg configuration and said first planar power switch unit is oriented in a face-up configuration relative to said plane of said one phase leg configuration and said second planar power switch unit is oriented in a face-down configuration relative to said plane; a pair of direct bonded copper (DBC) substrates each having a patterned inner surface wherein a first of said pair of DBC substrates is directly bonded to a top side and a second of said pair of DBC substrates is directly bonded to a bottom side of said planar one phase leg configuration of said first planar power switch unit and said second planar power switch unit to form a sandwich structure, and wherein said patterned inner surface of each of said pair of DBC substrates is attached and aligned with semiconductor die pads of said first planar power switch unit and said second planar power switch unit; a substrate attachment layer on an outer surface of each of said pair of DBC substrates, said outer surfaces being opposite said patterned inner surface of each of said pair of DBC substrates; and each of two heat exchangers being directly bonded to said outer surface of each of said pair of DBC substrates by each of said substrate attachment layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A power module package comprising:
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a first insulated gate bipolar transistor (IGBT) semiconductor die and a first diode semiconductor die spaced apart from said first IGBT semiconductor die, wherein said first IGBT semiconductor die and said first diode semiconductor die form a first planar power switch unit; a second IGBT semiconductor die and a second diode semiconductor die spaced apart from said second IGBT semiconductor die, wherein said second IGBT semiconductor die and said second diode semiconductor die form a second planar power switch unit, wherein said first planar power switch unit and said second planar power switch unit are arranged in a planar, one phase leg configuration and said first planar power switch unit is oriented in a face-up configuration relative to said plane of said one phase leg configuration and said second planar power switch unit is oriented in a face-down configuration relative to said plane; a pair of insulated metal frame substrates each having a patterned metallic inner surface wherein a first of said pair of insulated metal frame substrates is directly bonded to a top side and a second of said pair of insulated metal frame substrates is directly bonded to a bottom side of said planar one phase leg configuration of said first planar power switch unit and said second planar power switch unit to form a sandwich structure, and wherein said patterned inner surface of each of said pair of insulated metal frame substrates is attached and aligned with semiconductor die pads of said first planar power switch unit and said second planar power switch unit; a substrate attachment layer made of insulation bond, on an outer surface of each of said pair of insulated metal frame substrates, said outer surfaces being opposite said patterned inner surface of each of said pair of insulated metal frame substrates; and each of two heat exchangers being directly bonded to said outer surface of each of said pair of insulated metal frame substrates by said substrate attachment layers. - View Dependent Claims (9, 10)
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11. A method for manufacturing a power module package comprising:
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assembling parts in a jig, said parts comprising; a first insulated gate bipolar transistor (IGBT) semiconductor die and a first diode semiconductor die spaced apart from said first IGBT semiconductor die, wherein said first IGBT semiconductor die and said first diode semiconductor die form a first planar power switch unit; a second IGBT semiconductor die and a second diode semiconductor die spaced apart from said second IGBT semiconductor die, wherein said second IGBT semiconductor die and said second diode semiconductor die form a second planar power switch unit, wherein said first planar power switch unit and said second planar power switch unit are arranged in a planar, one phase leg configuration and said first planar power switch unit is oriented in a face-up configuration relative to said plane and said second planar power switch unit is oriented in a face-down configuration relative to said plane; a pair of direct bonded copper (DBC) substrates each having a patterned inner surface wherein a first of said pair of DBC substrates is aligned to a top side and a second of said pair of DBC substrates is aligned to a bottom side, of said planar one phase leg configuration of said first planar power switch unit and said second planar power switch unit to form a sandwich structure, and wherein said patterned inner surface of each of said pair of DBC substrates is facing and aligned with semiconductor die pads of said first planar power switch unit and said second planar power switch unit; one or more power leads positioned between said planar, one phase leg configuration and at least one of said pair of DBC substrates, said one or more power leads aligned with one or more of said semiconductor die pads or said patterned inner surface of said at least one of said pair of DBC substrates; one or more signal leads positioned between said planar, one phase leg configuration and at least one of said pair of DBC substrates, said one or more signal leads aligned with one or more of said semiconductor die pads or said patterned inner surface of said at least one of said pair of DBC substrates; a substrate attachment layer on each of said patterned inner surface of each of said pair of DBC substrates for attaching said first of said pair of DBC substrates to one or more of said power leads, one or more of said signal leads and said top side of said planar one phase leg configuration and said second of said pair of DBC substrates to one or more of said power leads, one or more of said signal leads and said bottom side of said planar one phase leg configuration to form a sandwich structure; and heating or heating and cooling said assembled parts and said jig in a fixture until said substrate attachment layer forms a bond among all said assembled parts. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification