METHOD FOR PREPARING GRAPHENE NANORIBBON ON INSULATING SUBSTRATE

• US 20130022813A1
• Filed: 08/05/2011
• Published: 01/24/2013
• Est. Priority Date: 07/22/2011
• Status: Active Grant

• Current Assignee: Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
• Original Assignee: Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
• Inventors: Xie, Xiaoming, Wang, Chen, Tang, Shujie, Ding, Guqiao, Chen, Ji, Jiang, Mianheng
• Granted Patent: US 9,328,413 B2
• Time in Patent Office: Days
• US Class Current: 428/367
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 2204/06 Graphene nanoribbons
• CPC Class Codes: C01B 32/184 Preparation
• CPC Class Codes: C01B 32/186 by chemical vapour deposition [CVD]
• CPC Class Codes: C23C 16/0218 in a reactive atmosphere C23C16/0227 takes precedence
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: Y10T 428/2918 including free carbon or carbide or therewith [not as steel]

Abstract

A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Claims

1. A method for preparing a graphene nanoribbon on an insulating substrate, comprising:

1) preparing a single atomic layer step on an insulating substrate; and

2) directly growing a graphene nanoribbon on the insulating substrate having single atomic layer steps, which is obtained in Step

     1).

2. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 1, wherein the single atomic layer steps are steps, where the height of a single step is the thickness of one atomic layer;

or grooves, the depth of which is the thickness of one atomic layer.

3. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 2, wherein the width of the step is from 50 nm to 20 μ

m, and the width of the groove is from 1 nm to 500 nm.

4. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 3, wherein the width of the step is from 500 nm to 5 μ

m.

5. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 1, wherein the insulating substrate is a substrate material capable of being dissociated to form a cleavage plane with atomic level flatness.

6. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 5, wherein the insulating substrate is selected from hexagonal boron nitride (hBN), gallium nitride, strontium titanate, aluminum oxide and quartz.

7. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 6, wherein the preparation of the single atomic layer step on the hBN substrate comprises:

cleaving a surface of the hBN substrate to obtain a fresh atomic surface; and

placing the hBN substrate in a mixture of hydrogen gas and argon gas for an annealing treatment, to obtain an hBN substrate having single atomic layer steps.

8. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 7, wherein in the mixture of the hydrogen gas and the argon gas, a volume ratio of the hydrogen gas and the argon gas is from 1:

1 to 1;

10.

9. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 8, wherein an annealing temperature of the high temperature annealing treatment is from 1,000°

C. to 1,200°

C., and an annealing time is from 10 min to 300 min.

10. The method for preparing a graphene nanoribbon on an insulating substrate as in claims 1, wherein in Step 2), the graphene nanoribbon is grown in a step-flow mode on the insulating substrate having single atomic layer steps by using methods of low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD) or pulsed laser deposition (PLD).

11. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 10, wherein in Step 2), a carbon source required for the growth of the graphene nanoribbon is selected from a gaseous carbon source, a liquid carbon source and a solid carbon source;

the gaseous carbon source is selected from methane, ethylene and ethyne;

the liquid carbon source is benzene; and

the solid carbon source is selected from polymethylmethacrylate (PMMA), glucose, and graphite.

12. The method for preparing a graphene nanoribbon on an insulating substrate as in claim 10, wherein in Step 2), a growth temperature for the graphene nanoribbon is from 500°

C. to 1,300°

C., and a growth time is from 5 min to 5 h.

13. A graphene nanoribbon, obtained by a method for preparing a graphene nanoribbon on an insulating substrate as in claims 1.

14. The graphene nanoribbon as in claim 13, wherein the width of the graphene nanoribbon is from 1 nm to 500 nm, and the length of the graphene nanoribbon is from 100 nm to 100 μ

m.