Apparatus and Methods for End Point Determination in Reactive Ion Etching

• US 20130023065A1
• Filed: 07/22/2011
• Published: 01/24/2013
• Est. Priority Date: 07/22/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Chien Rhone, Lin, Tzu-Cheng, Cheng, Yu-Jen, Lai, Chih-Wei, Chang, Hung-Pin, Wu, Tsang-Jiuh
• Granted Patent: US 8,445,296 B2
• Time in Patent Office: Days
• US Class Current: 438/5
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA

Abstract

Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.

Claims

1. A method, comprising:

receiving a wafer into an etch tool chamber for performing an RIE etch;

beginning the RIE etch to form vias in the wafer;

receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process;

providing a virtual metrology model for the RIE etch in the chamber;

inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber;

executing the virtual metrology model to estimate the current via depth;

comparing the estimated current via depth to a target depth; and

when the comparing indicates the current via depth is within a predetermined threshold of the target depth;

outputting a stop signal.

2. The method of claim 1, and further comprising:

when the comparing indicates the current via depth is not within the predetermined threshold of the target depth, then iteratively repeating the receiving, inputting, executing and comparing while continuing the RIE etch processing until the comparing indicates the current via depth is within the predetermined threshold of the target depth.

3. The method of claim 1, wherein providing the virtual metrology model for the RIE etch process in the chamber comprises:

for a plurality of wafer runs, collecting in-situ measurements for the one or more physical parameters of the etch tool chamber that are correlated to the depth of the vias;

following the RIE etch process for the plurality of wafer runs, determining the actual via etch depth achieved for each of the plurality of wafer runs;

performing statistical modeling of the physical parameter measurements to form the virtual metrology model for the RIE etch process; and

storing the virtual metrology model.

4. The method of claim 3, wherein the step of performing statistical modeling further comprises performing Fourier transforms on the measurements of the physical parameters.

5. The method of claim 4, wherein the step of performing statistical modeling further comprises using a hybrid statistical model to form the virtual metrology model.

6. The method of claim 1, wherein executing the virtual metrology model further comprises performing instructions that implement the virtual metrology model on a programmable computer having a stored version of the virtual metrology model;

and inputting the received in-situ measurements to the virtual metrology model.

7. The method of claim 1, and further comprising:

after outputting the stop signal, stopping the RIE etch process; and

performing a subsequent over etch on the vias on the wafer to further shape the vias.

8. The method of claim 1, and further comprising:

removing the wafer from the RIE etch tool;

filling the vias with conductive material; and

exposing the bottom of the vias in a backgrinding operation to form through silicon vias extending through the wafer.

9. A method, comprising:

performing a plurality of RIE etch operations in an RIE chamber tool on a plurality of silicon wafers to form vias;

during the plurality of RIE etch operations, collecting in-situ measurements of one or more physical parameters of the RIE chamber tool correlated to the resulting via depths;

following the plurality of RIE etch operations, measuring the via depths obtained in the plurality of silicon wafers;

performing a statistical analysis on the collected in-situ measurements and the measured via depths obtained, forming a virtual metrology model for the RIE etch operation in the RIE chamber tool;

receiving a silicon wafer into the RIE chamber tool;

beginning the RIE etch to form vias in the wafer;

receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the depth of the vias in the RIE etch process;

inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber;

executing the virtual metrology model to estimate the current via depth;

comparing the estimated current via depth to a target depth; and

when the comparing indicates the current via depth is within a predetermined threshold of the target depth;

outputting a stop signal.

10. The method of claim 9, and further comprising:

subsequently performing an over etch in the RIE chamber at a lowered etch rate to further shape the vias.

11. The method of claim 9, wherein the forming a virtual metrology model comprises forming a hybrid statistical model.

12. The method of claim 11, wherein forming a virtual metrology model comprises forming a model that estimates the via depth Y as:

Y=0.0133x₁+0.1455x₂+0.0694x₃−

0297x₄+ . . . +ε

;

where X₁ is cycles, X₂ is the upper chamber temperature, X₃ is another chamber temperature, x₄ is the TCP RF frequency interval, and c represents additional parameters.

13. The method of claim 9, and further comprising:

removing the silicon wafer from the RIE chamber tool;

performing a via filling process to fill the vias with a conductor material;

mounting integrated circuits on a die side of the silicon wafer;

performing a backgrinding operation on a back side of the silicon wafer, opposite the die side; and

exposing the vias on the back side to form through silicon vias.

14. The method of claim 13, wherein the integrated circuits are flip chip mounted on the die side of the silicon wafer.

15. The method of claim 14, and further comprising forming solder connectors on the back side of the silicon wafer, at least one of the solder connectors being coupled to a corresponding one of the through silicon vias.

16. An apparatus comprising:

a reactive ion etch chamber tool having outputs for signaling in-situ measurements of physical parameters during etching of a silicon wafer; and

having a stop input for receiving a signal indicating a stop for an etch process;

a programmable processor for executing a virtual metrology model of the reactive ion etch chamber to estimate a via depth achieved during an etch process responsive to the in-situ measurements, and having an output for transmitting the stop signal when an estimated via depth determined by the virtual metrology model exceeds a predetermined threshold based on a target via depth; and

a storage coupled to the programmable processor and storing the virtual metrology model of the reactive ion etch chamber.

17. The apparatus of claim 16, wherein the programmable processor is located within the reactive ion etch chamber tool.

18. The apparatus of claim 16, wherein the reactive ion etch chamber tool further comprises a wafer handling system.

19. The apparatus of claim 16, wherein the outputs for signaling the in-situ measurements include outputs signaling measurements selected from the group consisting essentially of chamber pressure, chamber temperature, RF frequency, number of process cycles, power and processing time.

20. The apparatus of claim 16, wherein the reactive ion etch chamber tool performs deep reactive ion etching.