Optical Proximity Correction Method

• US 20130024824A1
• Filed: 07/20/2011
• Published: 01/24/2013
• Est. Priority Date: 07/20/2011
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Huang, Chia-Wei, Chen, Ming-Jui, Tseng, Ting-Cheng, Kuo, Hui-Fang
• Granted Patent: US 8,423,923 B2
• Time in Patent Office: Days
• US Class Current: 716/53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.

Claims

1. An optical proximity correction method, comprising:

providing a target pattern;

decomposing the target pattern into a first pattern and a second pattern, wherein the first pattern and the second pattern are alternately arranged in a dense region;

providing a first compensation pattern into the second pattern to become a second revised pattern and providing a second compensation pattern into the first pattern to become a first revised pattern;

outputting the first revised pattern onto a first mask; and

outputting the second revised pattern onto a second mask.

2. The optical proximity correction method according to claim 1, wherein the first pattern includes a first edge pattern adjacent to the edge of the dense region, the first compensation pattern is added into the second pattern.

3. The optical proximity correction method according to claim 2, wherein the first compensation pattern partially overlaps the first edge pattern.

4. The optical proximity correction method according to claim 2, wherein the first compensation pattern is disposed at the side of the first edge pattern near the edge of the dense region.

5. The optical proximity correction method according to claim 2, wherein the second pattern in the dense region includes a second edge pattern adjacent to the first edge pattern.

6. The optical proximity correction method according to claim 2, wherein the first pattern and the second pattern are parallel to each other along a first direction in the dense region.

7. The optical proximity correction method according to claim 6, wherein the second edge pattern completely overlaps the projection of the first compensation pattern along a second direction and the first direction is substantially perpendicular to the second direction.

8. The optical proximity correction method according to claim 1, wherein the second pattern includes a second edge pattern adjacent to the edge of the dense region, the second compensation pattern is added into the first pattern.

9. The optical proximity correction method according to claim 8, wherein the second compensation pattern partially overlaps the second edge pattern.

10. The optical proximity correction method according to claim 8, wherein the second compensation pattern is disposed at the side of the second edge pattern near the edge of the dense region.

11. The optical proximity correction method according to claim 8, wherein the first pattern in the dense region includes a first edge pattern adjacent to the second edge pattern.

12. The optical proximity correction method according to claim 8, wherein the first pattern and the second pattern are parallel to each other along a first direction in the dense region.

13. The optical proximity correction method according to claim 12, wherein the first edge pattern completely overlaps the projection of the second compensation pattern along a second direction and the first direction is substantially perpendicular to the second direction.

14. The optical proximity correction method according to claim 1, wherein a distance between the target pattern in the dense region and the target pattern not in the dense region is greater than twice the critical dimension of an exposure system.

15. The optical proximity correction method according to claim 1, wherein the pitch of the first pattern in the dense region is substantially greater than the critical dimension of an exposure system.

16. The optical proximity correction method according to claim 1, wherein the first pattern in the dense region comprises a stripe pattern.

17. The optical proximity correction method according to claim 1, wherein the pitch of the second pattern in the dense region is substantially greater than the critical dimension of an exposure system.

18. The optical proximity correction method according to claim 1, wherein the second pattern in the dense region comprises a stripe pattern.

19. A circuit pattern, comprising a plurality of stripe patterns parallel to each other along a first direction, the stripe patterns are disposed in a dense region and comprise:

a first edge stripe pattern adjacent to the edge of the dense region; and

a second edge stripe pattern adjacent to the first edge stripe pattern,

wherein the first edge stripe pattern comprises a compensation pattern which extrudes from the first edge stripe pattern in a side opposite to the second edge stripe pattern.

20. The circuit pattern according to claim 19, wherein the first pattern and the second pattern are parallel to each other along a first direction, the second edge stripe pattern completely overlaps the projection of the compensation pattern along a second direction, wherein the first direction is substantially perpendicular to the second direction.