LIGHT-EMITTING DEVICE
First Claim
1. A light-emitting device, comprising:
- a substrate;
an epitaxial structure on the substrate, wherein the epitaxial structure comprises at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer;
a first electrode on the first conductivity type semiconductor layer;
a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and
a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.
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Accused Products
Abstract
A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.
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Citations
20 Claims
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1. A light-emitting device, comprising:
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a substrate; an epitaxial structure on the substrate, wherein the epitaxial structure comprises at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light-emitting device, comprising:
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a substrate; an epitaxial structure on the substrate, wherein the epitaxial structure comprises at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a Bragg reflector (DBR) layer between the transparent conductive layer and the first electrode. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification