LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE

• US 20130026527A1
• Filed: 04/05/2011
• Published: 01/31/2013
• Est. Priority Date: 04/08/2010
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Ichikawa, Masatsugu
• Granted Patent: US 8,916,399 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

Provided is a light emitting device having strong bonding strength between the light emitting element and the wavelength converting member is provided. In the light emitting device, a light emitting element and a wavelength converting member are bonded. Particularly, the light emitting element has, from the wavelength converting member side, a first region and a second region, the wavelength converting member has, from the light emitting element side, a third region and a fourth region. The first region has an irregular atomic arrangement compared with the second region, the third region has an irregular atomic arrangement compared with the fourth region, and the first region and the third region are directly bonded.

Claims

1. A light emitting device comprising:

a light emitting element and a wavelength converting member bonded with each other;

wherein

the light emitting element has, from the wavelength converting member side, a first region and a second region;

the wavelength converting member has, from the light emitting element side, a third region and a fourth region;

the first region has an irregular atomic arrangement compared with the second region;

the third region has an irregular atomic arrangement compared with the fourth region, and

the first region and the third region are directly bonded.

2. The light emitting device according to claim 1, wherein the light emitting element comprises a substrate having the first region and the second region and a semiconductor stacked layer portion formed on the substrate, and the wavelength converting member has a support member which has the third region and the fourth region and a fluorescent material which is contained in the support member.

3. The light emitting device according to claim 2, wherein the substrate is made of sapphire and the support member is made of aluminum oxide.

4. A method of manufacturing a light emitting device comprising steps of:

preparing a light emitting element;

preparing a wavelength converting member; and

bonding the light emitting element and the wavelength converting member by using a surface activated bonding technique.

5. The method of manufacturing a light emitting device according to claim 4, wherein the light emitting element has a substrate made of sapphire, and a semiconductor stacked layer portion formed on the substrate, and the wavelength converting member has a support member made of aluminum oxide, and a fluorescent material contained in the support member, and wherein in the step of bonding, the substrate and the support member are bonded.