STRUCTURES AND METHODS FOR FORMING HIGH DENSITY TRENCH FIELD EFFECT TRANSISTORS
First Claim
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1. A semiconductor structure comprising:
- trenches extending into a semiconductor region, portions of the semiconductor region extending between adjacent trenches forming mesa regions;
a gate electrode in each trench;
well regions of a first conductivity type extending in the semiconductor region between adjacent trenches;
source regions of a second conductivity type in the well regions; and
heavy body regions of the first conductivity type in the well regions, wherein the source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls and to a top surface of the mesa regions.
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Abstract
A semiconductor structure comprises trenches extending into a semiconductor region. Portions of the semiconductor region extend between adjacent trenches forming mesa regions. A gate electrode is in each trench. Well regions of a first conductivity type extend in the semiconductor region between adjacent trenches. Source regions of a second conductivity type are in the well regions. Heavy body regions of the first conductivity type are in the well regions. The source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls to a top surface of the mesa regions.
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Citations
20 Claims
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1. A semiconductor structure comprising:
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trenches extending into a semiconductor region, portions of the semiconductor region extending between adjacent trenches forming mesa regions; a gate electrode in each trench; well regions of a first conductivity type extending in the semiconductor region between adjacent trenches; source regions of a second conductivity type in the well regions; and heavy body regions of the first conductivity type in the well regions, wherein the source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls and to a top surface of the mesa regions. - View Dependent Claims (2, 3, 4, 5)
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6. A trench field effect transistor (FET) comprising:
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trenches extending into a semiconductor region; well regions of a first conductivity type extending in the semiconductor region between adjacent trenches; heavy body regions of the first conductivity type extending over the well regions and abutting sidewalls of adjacent trenches, wherein a doping concentration of the heavy body regions is greater than a doping concentration of the well regions; source regions of a second conductivity type abutting the trench sidewalls, the source region being embedded in the well regions below at least a portion of the heavy body regions; and a gate electrode in each trench, the gate electrode being insulated from the well regions, the heavy body regions, and the source regions by a dielectric. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A trench field effect transistor (FET) comprising:
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trenches extending into a semiconductor region; a gate electrode recessed in each trench; a dielectric extending over the gate electrode; a source region of a first conductivity type recessed in each trench over the dielectric; and a source interconnect extending into each trench to contact an upper surface of the source region. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification