VIA STRUCTURE

• US 20130026647A1
• Filed: 07/31/2011
• Published: 01/31/2013
• Est. Priority Date: 07/31/2011
• Status: Active Grant

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Nanya Technology Corporation
• Inventors: Ireland, Philip J.
• Granted Patent: US 8,482,131 B2
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A via structure includes at least a first via set and a second via set electrically connected to the first via set. There is at least one via in the first via set and at least one via in the second via set. The via in the first via set has a cross-sectional area which is larger than that of the via in the second via set.

Claims

1. A via structure, comprising:

a first via set having a first cross-sectional area; and

at least one second via set having a second cross-sectional area and electrically connected to said first via set, wherein said second via set has a second surface area which is substantially greater than a first surface area of said first via set so that said second cross-sectional area is substantially greater than said first cross-sectional area.

2. The via structure of claim 1, wherein said second via set and said first via set together form an extending via chain.

3. The via structure of claim 2, wherein said extending via chain exhibits a gradient temperature profile when a current passes through said extending via chain.

4. The via structure of claim 2, wherein said extending via chain maintains a structural integrity when a current passes through said extending via chain.

5. The via structure of claim 1, wherein said second via set consists of one single second metal line and one single second via plug.

6. The via structure of claim 1, wherein said second via set comprises multiple second via plugs.

7. The via structure of claim 1, wherein said first via set consists of one single first metal line and one single first via plug.

8. The via structure of claim 1, wherein said second via set has a second volume which is substantially greater than a first volume of said first via set.

9. The via structure of claim 1, wherein at least one of said second via set and said first via set comprises W.

10. The via structure of claim 1, being for use in a back end of a line (BEOL) device.

11. A via structure, comprising:

a first via set of a first cross-sectional area; and

at least one second via set having a second cross-sectional area and electrically connected to said first via set, wherein said second via set comprises a plurality of second via plugs and said second cross-sectional area is not equal to said first cross-sectional area.

12. The via structure of claim 11, wherein said second via set and said first via set together form an extending via chain.

13. The via structure of claim 12, wherein said extending via chain exhibits a gradient temperature profile when a current passes through said extending via chain.

14. The via structure of claim 12, wherein said extending via chain maintains a structural integrity when a current passes through said extending via chain.

15. The via structure of claim 11, wherein said first via set consists of one single first via plug and one single metal line.

16. The via structure of claim 11, wherein said first via set comprises a plurality of first via plugs.

17. The via structure of claim 11, wherein said second cross-sectional area is not less than said first cross-sectional area.

18. The via structure of claim 11, wherein said second cross-sectional area is substantially greater than said first cross-sectional area.

19. The via structure of claim 11, wherein said second via set has a second volume which is not less than a first volume of said first via set.

20. The via structure of claim 11, wherein at least one of said second via set and said first via set comprises W.

21. The via structure of claim 11, for use in a back end of a line (BEOL) device.