APPARATUSES AND METHODS INCLUDING MEMORY ARRAY DATA LINE SELECTION
First Claim
Patent Images
1. An apparatus comprising:
- data lines;
a node; and
a memory array including a first portion and a second portion, the first portion including memory cell strings coupled to the data lines, the second portion including a selector configured to selectively couple the data lines to the node.
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Abstract
Some embodiments include an apparatus having data lines coupled to memory cell strings and a selector configured to selectively couple one of the data lines to a node. The memory cell strings and the selector can be formed in the same memory array of the apparatus. Other embodiments including additional apparatus and methods are described.
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Citations
53 Claims
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1. An apparatus comprising:
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data lines; a node; and a memory array including a first portion and a second portion, the first portion including memory cell strings coupled to the data lines, the second portion including a selector configured to selectively couple the data lines to the node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An apparatus comprising:
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a substrate; a data line overlying the substrate; a first body region coupled to the data line and having a length in a direction between the substrate and the data line, first gates located along the length of the first body region, and a first material between the first body region and the first gates, wherein at least a portion of the first material is configured to store information; and a second body region coupled to the data line and having a length in the direction between the substrate and the data line, second gates located along the length of the second body region, and a second material between the second body region and the second gate, and no portion of the second material is configured to store information. - View Dependent Claims (14, 15, 16, 17, 18)
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19. An apparatus comprising:
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a first device level and a second device level; a memory cell string including a first memory cell located at the first device level and a second memory cell located at the second device level; a conductive line configured to exchange information with the memory cell string; and a switching circuit configured to selectively exchange the information with a node, the circuit including a number of gates, the gates including a first gate located at the first device level and a second gate located at the second device level. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. An apparatus comprising:
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a data line including a first segment and a second segment separated from the first segment; a memory cell string coupled to the first segment, the memory cell string including a first body region having a length and first gates located along the length of the first body region; and a switching circuit having a second body region coupled to the first segment and a third body region coupled to the second segment, a conductive line coupling the second body region to the third body region, and second gates located along a length of the first and second body regions. - View Dependent Claims (31, 32, 33, 34)
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35. An apparatus comprising:
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a first memory cell string including a first body region, first gates located along a length of the first body region, and a first material between the first gates and the first body region, wherein at least a portion of the first material is configured to store information; a second memory cell string including a second body region, second gates located along a length of the second body region, and a second material between the gates and the second body region, wherein at least a portion of the second material is configured to store information; a first data line coupled to the first memory cell string; a second data line coupled to the second memory cell string; and a selector configured to selectively couple one of the first and second data lines to a node, the selector including a third body region, third gates located along a length of the third body region, and a third material between the third gates and the third body region. - View Dependent Claims (36, 37, 38)
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39. An apparatus comprising:
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a substrate; a node; a sense circuit coupled to the node, the sense circuit including at least a portion formed in the substrate; data lines coupled to the node; and a memory array formed over the substrate, the memory array including a first portion and a second portion, the first portion including memory cell strings coupled to the data lines, the second portion including a selector configured to selectively couple the data lines to the node. - View Dependent Claims (40, 41)
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42. A method comprising:
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applying a same voltage to all gates of a circuit of an apparatus in a first operation of the apparatus, the circuit coupled between a first segment of a data line and a second segment of the data line of the apparatus, the first segment coupled to a memory cell string, the memory cell string including a first memory cell located at a first device level of the device and a second memory cell located at a second device level of the apparatus; and applying the same voltage to each of the gates of the circuit in a second operation of the apparatus. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification