OPTO-ELECTRICAL DEVICE AND METHOD FOR ARTIFACT REDUCTION

• US 20130030275A1
• Filed: 07/25/2012
• Published: 01/31/2013
• Est. Priority Date: 07/25/2011
• Status: Active Grant

• Current Assignee: Neuronexus Technologies Incorporated (NEL Group, Inc.)
• Original Assignee: Neuronexus Technologies Incorporated (NEL Group, Inc.)
• Inventors: Seymour, John P., Jeon, Jongeun, Hewitt, Nicholas, Khurram, Abeer
• Granted Patent: US 9,782,091 B2
• Time in Patent Office: Days
• US Class Current: 600/377
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/6847 mounted on an invasive device
• CPC Class Codes: A61B 5/6868 Brain
• CPC Class Codes: A61N 1/0534 Electrodes for deep brain stimulation
• CPC Class Codes: A61N 2005/0612 using probes penetrating tissue; interstitial probes
• CPC Class Codes: A61N 5/0622 Optical stimulation for exciting neural tissue
• CPC Class Codes: Y10T 29/49826 Assembling or joining
• CPC Class Codes: Y10T 29/49886 to roughen surface

Abstract

An optical electrode having a plurality of electrodes, including a recording electrode having a roughened surface and an optical light source configured to emit light, wherein at least a portion of the light impinges on the recording electrode. Also disclosed are methods of producing an optical electrode and an opto-electronic neural interface system.

Claims

1. An optical electrode, comprising:

a plurality of electrodes, including a recording electrode having a roughened surface; and

an optical light source configured to emit light, wherein at least a portion of the light impinges on the recording electrode.

2. The optical electrode of claim 1, wherein the roughened surface of the recording electrode comprises a material attached to the recording electrode.

3. The optical electrode of claim 2, wherein the material is selected from the group consisting of PEDOT, iridium oxide, and nanopatterned metals such as platinum, iridium, and titanium nitride.

4. The optical electrode of claim 1, wherein the roughened surface of the recording electrode has an average roughness of greater than 10 nm.

5. The optical electrode of claim 1, wherein the roughened surface of the recording electrode has an average roughness of greater than 20 nm.

6. The optical electrode of claim 1, wherein the roughened surface of the recording electrode has an average roughness of greater than 100 nm.

7. The optical electrode of claim 1, wherein the roughened surface of the recording electrode has an RMS surface roughness of greater than 100 nm.

8. The optical electrode of claim 1, wherein the plurality of electrodes are part of a thin-film structure.

9. The optical electrode of claim 1, wherein the optical light source comprises a waveguide.

10. A method of producing an optical electrode with a reduced photoelectrochemical artifact, comprising:

coupling a plurality of electrodes to a carrier, the plurality of electrodes comprising at least one recording electrode;

providing a roughened surface on the at least one recording electrode; and

coupling an optical light source to the carrier, the optical light source being configured to emit light and wherein at least a portion of the light impinges on the at least one recording electrode.

11. The method of claim 10, wherein providing a roughened surface on the recording electrode comprises applying a material to the recording electrode.

12. The method of claim 11, wherein the material is selected from the group consisting of PEDOT, iridium oxide, and nanopatterned metals such as platinum, iridium, and titanium nitride.

13. The method of claim 10, wherein the roughened surface of the recording electrode has an average roughness of greater than 10 nm.

14. The method of claim 10, wherein the roughened surface of the recording electrode has an average roughness of greater than 20 nm.

15. The method of claim 10, wherein the roughened surface of the recording electrode has an average roughness of greater than 100 nm.

16. The method of claim 10, wherein the roughened surface of the recording electrode has an RMS surface roughness of greater than 100 nm.

17. The method of claim 10, wherein the plurality of electrodes are part of a thin-film structure.

18. The method of claim 10, wherein the optical light source comprises a waveguide.

19. An opto-electronic neural interface system, comprising:

an optical electrode including

a plurality of electrodes, including a recording electrode having a roughened surface, and

an optical light source configured to emit light, wherein at least a portion of the light impinges on the recording electrode;

an electrical subsystem in communication with the plurality of electrodes; and

an optical subsystem in communication with the optical light source.

20. The system of claim 19, wherein the roughened surface of the recording electrode comprises a material attached to the recording electrode.

21. The system of claim 20, wherein the material is selected from the group consisting of PEDOT, iridium oxide, and nanopatterned metals such as platinum, iridium, and titanium nitride.

22. The system of claim 19, wherein the roughened surface of the recording electrode has an average roughness of greater than 10 nm.

23. The system of claim 19, wherein the roughened surface of the recording electrode has an RMS surface roughness of greater than 100 nm.