EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

• US 20130032781A1
• Filed: 08/09/2012
• Published: 02/07/2013
• Est. Priority Date: 02/16/2010
• Status: Active Grant

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: MIYOSHI, Makoto, Sumiya, Shigeaki, Ichimura, Mikiya, Sugiyama, Tomohiko, Tanaka, Mitsuhiro
• Granted Patent: US 9,090,993 B2
• Time in Patent Office: Days
• US Class Current: 257/18
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/68 Crystals with laminate structure, e.g. "superlattices"
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer

Abstract

Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

Claims

1. An epitaxial substrate in which a group of group-III nitride layers are formed on a base substrate made of (111)-oriented single crystal silicon such that a (0001) crystal plane of said group of group-III nitride layers is substantially in parallel with a substrate surface of said base substrate, said epitaxial substrate comprising:

a superlattice layer group in which a plurality of superlattice layers are laminated, said superlattice layer being formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated; and

a crystal layer made of a group-III nitride and formed above said base substrate, said crystal layer being positioned at an upper side of said superlattice layer group relative to said base substrate,

wherein said superlattice layer group has a compressive strain contained therein, and, in said superlattice layer group, the more distant said superlattice layer is from said base substrate, the greater said compressive strain becomes.

2. The epitaxial substrate according to claim 1, wherein

a second group-III nitride of said second unit layer has an in-plane lattice constant, under a strain-free state, greater than that of a first group-III nitride of said first unit layer,

each of said second unit layers is formed so as to be in a coherent state relative to said first unit layer located immediately below,

in said superlattice layer group, said superlattice layer formed at an upper position has an increased thickness of said second unit layer.

3. The epitaxial substrate according to claim 1, further comprising

an intermediate layer formed immediately on said superlattice layer group, said intermediate layer enhancing said compressive strain introduced in said epitaxial substrate by said superlattice layer group.

4. The epitaxial substrate according to claim 3, wherein

said intermediate layer is made of a group-III nitride, and formed so as to be in a coherent state relative to said superlattice layer group.

7. The epitaxial substrate according to claim 1, wherein

said first unit layer is made of AlN, and said second unit layer is made of a group-III nitride having a composition of Al_xGa_1-xN (0≦

x≦

0.25).

8. The epitaxial substrate according to claim 7, wherein

said first intermediate layer is made of a group-III nitride having a composition of Al_yGa_1-yN (0≦

y≦

0.25), and formed with a thickness of 50 nm or more and 250 nm or less.

9. The epitaxial substrate according to claim 1, further comprising:

a first base layer made of AlN and formed on said base substrate; and

a second base layer made of Al_pGa_1-pN (0≦

p<

1) and formed on said first base layer,

wherein

said first base layer is a layer with many crystal defects configured of at least one kind from a columnar or granular crystal or domain,

an interface between said first base layer and said second base layer defines a three-dimensional concavo-convex surface,

said superlattice layer group is formed immediately on said second base layer.

5. An epitaxial substrate in which a group of group-III nitride layers are formed on a base substrate made of (111)-oriented single crystal silicon such that a (0001) crystal plane of said group of group-III nitride layers is substantially in parallel with a substrate surface of scud base substrate, said epitaxial substrate comprising:

a superlattice layer group in which a plurality of superlattice layers are laminated, said superlattice layer being formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated; and

as crystal layer made of a group-III nitride and formed above said superlattice layer group,

wherein

a second group-III nitride of said second unit layer has an in-plane lattice constant, under a strain-free state, greater than that of a first group-III nitride of said first unit layer,

each of said second unit layers is formed so as to be in a coherent state relative to said first unit layer located immediately below,

in said superlattice layer group, said superlattice layer formed at an upper position has an increased thickness of said second unit layer.

6. The epitaxial substrate according to claim 5, further comprising

an intermediate layer made of a group-III nitride and formed immediately on said superlattice layer group, said intermediate layer being formed so as to be in a coherent state relative to said superlattice layer group.

15. The epitaxial substrate according to claim 5, wherein

said first unit layer is made of AlN, and said second unit layer is made of a group-III nitride having a composition of Al_xGa_1-xN (0≦

x≦

0.25).

16. The epitaxial substrate according to claim 15, wherein

said first intermediate layer is made of a group-III nitride having a composition of Al_yGa_1-yN (0≦

y≦

0.25), and formed with a thickness of 50 nm or more and 250 nm or less.

17. The epitaxial substrate according to claim 5, further comprising:

a first base layer made of AlN and formed on said base substrate; and

a second base layer made of Al_pGa_1-pN (0≦

p<

1) and formed on said first base layer,

wherein

said first base layer is a layer with many crystal defects configured of at least one kind from a columnar or granular crystal or domain,

an interface between said first base layer and said second base layer defines a three-dimensional concavo-convex surface,

said superlattice layer group is formed immediately on said second base layer.

10. A method for manufacturing an epitaxial substrate for use in a semiconductor device, said epitaxial substrate having a group of group-III nitride layers formed on a base substrate made of (111)-oriented single crystal silicon such that a (0001) crystal plane of said group of group-III nitride layers is substantially in parallel with a substrate surface of said base substrate, said method comprising:

a superlattice layer group formation step for repeating superlattice layer formation step a plurality of times to thereby form a superlattice layer group in which a plurality of superlattice layers are laminated, said superlattice layer formation step being a step for forming a superlattice layer by alternately and repeatedly laminating a first unit layer and a second unit layer made of group-III nitrides having different compositions; and

a crystal layer formation step for forming a crystal layer made of a group-III nitride at a position above said superlattice layer group,

wherein

in said superlattice layer group formation step, said first unit layer and said second unit layer are formed in such a manner that;

a second group-III nitride of said second unit layer has an in-plane lattice constant, under a strain-free state, greater than that of a first group-III nitride of said first unit layer;

each of said second unit layers is in a coherent state relative to said first unit layer located immediately below; and

said superlattice layer formed at an upper position has an increased thickness of said second unit layer.

11. The method for manufacturing the epitaxial substrate according to claim 10, further comprising

an intermediate layer formation step for forming an intermediate layer so as to be in a coherent state relative to said superlattice layer group, said intermediate layer being made of a group-III nitride and formed immediately on said superlattice layer group.

12. The method for manufacturing the epitaxial substrate according to claim 10, wherein

said first unit layer is made of AlN, and said second unit layer is made of a group-III nitride having a composition of Al_xGa_1-xN (0≦

x≦

0.25).

13. The method for manufacturing the epitaxial substrate according to claim 12, wherein

said first intermediate layer is made of a group-III nitride having a composition of Al_yGa_1-yN (0≦

y≦

0.25), and formed with a thickness of 50 nm or more and 250 nm or less.

14. The method for manufacturing the epitaxial substrate according to claim 10, further comprising:

a first base layer formation step for forming a first base layer on said base substrate, said first base layer being made of AlN; and

a second base layer formation step for forming a second base layer on said first base layer, said second base layer being made of Al_pGa_1-pN (0≦

p<

1),

wherein

in said first base layer formation step, said first base layer is formed as a layer with many crystal defects configured of at least one kind from a columnar or granular crystal or domain, such that a surface thereof is a three-dimensional concavo-convex surface,

in said superlattice layer group formation step, said superlattice layer group is formed immediately on said second base layer.