LIGHT EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. An LED array comprising:
- a substrate;
a plurality of protrusions formed on a top surface of the substrate; and
a plurality of LEDs formed on the top surface of the substrate and located at a top of the protrusions, the LEDs being in electrical connection with each other, each LED comprising a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence, a bottom surface of the n-type GaN layer connecting the connecting layer having a roughened exposed portion, the bottom surface of the n-type GaN layer having an N-face polarity.
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Abstract
An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence. A bottom surface of the n-type GaN layer connecting the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity.
23 Citations
18 Claims
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1. An LED array comprising:
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a substrate; a plurality of protrusions formed on a top surface of the substrate; and a plurality of LEDs formed on the top surface of the substrate and located at a top of the protrusions, the LEDs being in electrical connection with each other, each LED comprising a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence, a bottom surface of the n-type GaN layer connecting the connecting layer having a roughened exposed portion, the bottom surface of the n-type GaN layer having an N-face polarity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for manufacturing an LED array comprising:
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providing a substrate; forming a plurality of protrusions by etching on a top end of the substrate; forming a connecting layer, an n-type GaN layer, an active layer and a p-type GaN layer at a top of the substrate in sequence, the connecting layer, the n-type GaN layer, the active layer and the p-type GaN layer cooperatively forming a semiconductor structure, a bottom surface of the n-type GaN layer facing towards and in connection with the connecting layer having an N-face polarity; forming grooves in the semiconductor structure and dividing the semiconductor structure into a plurality of LEDs, the grooves passing through the p-type GaN layer, the active layer and the n-type GaN layer and the connecting layer to expose the protrusions; etching the connecting layer by alkaline solution to expose a portion of the bottom surface of the n-type GaN layer, and correspondingly roughening the exposed portion of the bottom surface of the n-type GaN layer during the etching; and forming electrical connections between the LEDs. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification