INTEGRATED CIRCUIT

• US 20130033303A1
• Filed: 10/26/2011
• Published: 02/07/2013
• Est. Priority Date: 02/21/2011
• Status: Active Grant

• Current Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Inventors: Morimoto, Takashi, Hashimoto, Takashi
• Granted Patent: US 8,952,499 B2
• Time in Patent Office: Days
• US Class Current: 327/512
• CPC Class Codes: H01L 23/345 Arrangements for heating thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An integrated circuit is provided with a substrate, an electrode, two diffusion areas, and a resistance heater. The substrate includes a first surface and second surface that are substantially parallel to each other. The electrode is laminated onto the first surface. The two diffusion areas are disposed within the substrate in the vicinity of the electrode to form one transistor with the electrode. The resistance heater is located on an area of the second surface across the substrate from the electrode. The resistance heater produces heat by allowing electric current to flow.

Claims

1. An integrated circuit comprising:

a substrate including a first surface and a second surface that are substantially parallel to each other;

an electrode laminated onto the first surface;

two diffusion areas disposed within the substrate by an electrode to form one transistor with the electrode; and

a resistance heater located on an area of the second surface across the substrate from the electrode, the resistance heater configured to produce heat by allowing electric current to flow.

2. The integrated circuit of claim 1, further comprising

a thermal insulator located within the substrate and surrounding the two diffusion areas to prevent external leakage of heat from the two diffusion areas.

3. The integrated circuit of claim 1, wherein

the transistor belongs to a critical path of the integrated circuit.

4. The integrated circuit of claim 1, wherein

operating speed of the transistor rises due to the resistance heater heating the transistor.

5. The integrated circuit of claim 4, wherein

the transistor is a MOS transistor.

6. The integrated circuit of claim 1, further comprising

a heater control circuit located on the substrate and including a current source configured to supply electric current to the resistance heater, the heater control circuit configured to adjust an amount of electric current flowing between the current source and the resistance heater.

7. The integrated circuit of claim 6, wherein

the heater control circuit further includes a switch to adjust the amount of electric current supplied to the resistance heater by allowing or preventing flow of electric current between the current source and the resistance heater.

8. The integrated circuit of claim 6, wherein

the heater control circuit allows electric current to flow to the resistance heater only while the transistor is operating.

9. The integrated circuit of claim 6, wherein

the heater control circuit alters the amount of electric current applied to the resistance heater in accordance with a use case of the integrated circuit.

10. The integrated circuit of claim 6, wherein

the heater control circuit adjusts the amount of electric current applied to the resistance heater according to bandwidth of an external memory connected to the integrated circuit.

11. The integrated circuit of claim 6, further comprising

a temperature detection circuit configured to detect a temperature of an area surrounding the transistor, wherein

the heater control circuit adjusts length of a period of time during which electric current is allowed to flow continuously to the resistance heater according to the temperature detected by the temperature detection circuit.

12. The integrated circuit of claim 6, further comprising

a temperature detection circuit configured to detect a temperature of an area surrounding the transistor, wherein

the heater control circuit adjusts the amount of electric current allowed to flow to the resistance heater according to the temperature detected by the temperature detection circuit.

13. An integrated circuit comprising:

a first substrate including a first surface and second surface that are substantially parallel to each other;

an electrode laminated onto the first surface;

two diffusion areas disposed within the first substrate in the vicinity of the electrode to form one transistor with the electrode;

a second substrate bonded to the second surface; and

a resistance heater located on an area of the second substrate opposite to an area of the second surface across the first substrate from the electrode and configured to produce heat by allowing electric current to flow.

14. The integrated circuit of claim 13, further comprising

a thermal insulator surrounding the two diffusion areas within the first substrate to prevent external leakage of heat from the two diffusion areas.

15. The integrated circuit of claim 13, wherein

the transistor belongs to a critical path of the integrated circuit.

16. The integrated circuit of claim 13, wherein

operating speed of the transistor rises by the resistance heater heating the transistor.

17. The integrated circuit of claim 16, wherein

the transistor is a MOS transistor.

18. The integrated circuit of claim 13, further comprising

a heater control circuit located on one of the first substrate and the second substrate and including a current source configured to supply electric current to the resistance heater, the heater control circuit configured to adjust an amount of electric current flowing between the current source and the resistance heater.

19. The integrated circuit of claim 18, wherein

the heater control circuit further includes a switch to adjust the amount of electric current applied to the resistance heater by allowing or preventing flow of electric current between the current source and the resistance heater.

20. The integrated circuit of claim 18, wherein

the heater control circuit allows electric current to flow to the resistance heater only while the transistor is operating.

21. The integrated circuit of claim 18, wherein

the heater control circuit alters the amount of electric current applied to the resistance heater in accordance with a use case of the integrated circuit.

22. The integrated circuit of claim 18, wherein

the heater control circuit adjusts the amount of electric current applied to the resistance heater according to bandwidth of an external memory connected to the integrated circuit.

23. The integrated circuit of claim 18, further comprising

a temperature detection circuit configured to detect the temperature of an area surrounding the transistor, wherein

the heater control circuit adjusts a length of the period of time during which electric current is allowed to flow continuously to the resistance heater according to the temperature detected by the temperature detection circuit.

24. The integrated circuit of claim 18, further comprising

a temperature detection circuit configured to detect a temperature of an area surrounding the transistor, wherein

the heater control circuit adjusts the amount of electric current allowed to flow continuously to the resistance heater according to the temperature detected by the temperature detection circuit.