SEMICONDUCTOR MEMORY DEVICE INCLUDING TEMPERATURE TEST CIRCUIT
First Claim
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1. A semiconductor memory device comprising:
- a temperature sensor configured to select first and second selection reference voltages selected in a test mode as an input reference voltage according to first and second counting signals which are sequentially counted, compare the selected input reference voltage with a level of a variable voltage which changes according to internal temperature, and generate a temperature flag signal containing information on the internal temperature; and
a temperature test circuit configured to output the first and second counting signals at a time point where a level of the temperature flag signal changes.
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Abstract
A semiconductor memory device includes: a temperature sensor configured to select first and second selection reference voltages selected in a test mode as an input reference voltage according to first and second counting signals which are sequentially counted, compare the selected input reference voltage with a level of a variable voltage which changes according to internal temperature, and generate a temperature flag signal containing information on the internal temperature; and a temperature test circuit configured to output the first and second counting signals at a time point where a level of the temperature flag signal changes.
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14 Claims
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1. A semiconductor memory device comprising:
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a temperature sensor configured to select first and second selection reference voltages selected in a test mode as an input reference voltage according to first and second counting signals which are sequentially counted, compare the selected input reference voltage with a level of a variable voltage which changes according to internal temperature, and generate a temperature flag signal containing information on the internal temperature; and a temperature test circuit configured to output the first and second counting signals at a time point where a level of the temperature flag signal changes. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor memory device comprising:
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a temperature sensor configured to select first and second selection reference voltages selected in a test mode as an input reference voltage according to first and second counting signals which are sequentially counted, compare the selected input reference voltage with a level of a variable voltage which changes according to internal temperature, and generate a temperature flag signal containing information on the internal temperature; a first code converter configured to convert codes of the first and second counting signals; a temperature test circuit configured to output the first and second counting signals of which the codes were converted by the first code converter, at a time point where a level of the temperature flag signal changes; and a second code converter configured to convert the codes of the first and second counting signals outputted by the temperature test circuit. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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Specification