SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
First Claim
1. A method for manufacturing a semiconductor light-emitting device, comprising:
- forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer;
forming a groove through the first semiconductor layer; and
forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove.
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Abstract
A method for manufacturing a semiconductor light-emitting device includes forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer. The method includes forming a groove through the first semiconductor layer. The method includes forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove.
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Citations
10 Claims
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1. A method for manufacturing a semiconductor light-emitting device, comprising:
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forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; forming a groove through the first semiconductor layer; and forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification