TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN
First Claim
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1. A method comprising:
- forming a tub region of a transistor, wherein the tub region includes a channel region of the transistor, wherein the tub region extends to a first depth, and wherein the tub region has an opposite conductivity type as a drain region of the transistor;
forming a trench in the drain region of the transistor to a second depth, wherein the second depth is greater than the first depth; and
forming a dielectric layer over at least a portion of the trench to reduce a field strength in proximity to the tub region.
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Abstract
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
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20 Claims
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1. A method comprising:
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forming a tub region of a transistor, wherein the tub region includes a channel region of the transistor, wherein the tub region extends to a first depth, and wherein the tub region has an opposite conductivity type as a drain region of the transistor; forming a trench in the drain region of the transistor to a second depth, wherein the second depth is greater than the first depth; and forming a dielectric layer over at least a portion of the trench to reduce a field strength in proximity to the tub region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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forming a tub region of a transistor to a first depth, wherein the tub region includes at least a portion of a channel region of the transistor; forming a first trench in a drain region of the transistor to a second depth greater than or equal to the first depth; and forming a second trench within a surface of the first trench such that second trench is disposed below the first trench. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification