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AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD

  • US 20130037793A1
  • Filed: 08/11/2011
  • Published: 02/14/2013
  • Est. Priority Date: 08/11/2011
  • Status: Abandoned Application
First Claim
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1. A method comprising:

  • providing a substrate, the substrate having a surface, the surface including a source area, a drain area, and a channel area, the substrate including an oxide semiconductor layer on the surface of the substrate, a first dielectric layer on the oxide semiconductor layer overlying the channel area of the substrate, and a first metal layer on the first dielectric layer; and

    implanting hydrogen ions in the oxide semiconductor layer overlying the source area and the drain area of the substrate to form doped n-type oxide semiconductor layers, wherein the implanting is performed via a plasma-immersion ion implantation process.

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