PIXEL ARRAY SUBSTRATE AND DETECTING MODULE

• US 20130037794A1
• Filed: 07/03/2012
• Published: 02/14/2013
• Est. Priority Date: 08/09/2011
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: Innocom Technology Limited, InnoLux Corporation
• Inventors: CHEN, Yu-Heing
• Granted Patent: US 8,450,746 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/14658 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00

Abstract

A pixel array substrate including a substrate and a plurality of pixel structures is provided. Each pixel structure includes a patterned metal layer, an insulating layer, a patterned semiconductor layer and a data line layer. The patterned metal layer includes a gate line and a common electrode line. The patterned semiconductor layer includes a channel layer and a photosensitive resistance layer. The channel layer is disposed above and overlaps a part of the gate line. The data line layer includes a patterned first data line, a second data line and a third data line. The first and the second data lines are coupled to the channel layer and combine with the channel layer and the gate line to compose an active component. The second and the third data lines are coupled to the photosensitive resistance layer and combine with the photosensitive resistance layer to compose a light detecting component.

Claims

1. A pixel array substrate, comprising:

a substrate; and

a plurality of pixel structures disposed on the substrate, wherein each pixel structure comprises;

a patterned metal layer, comprising a gate line and a common electrode line;

an insulating layer covering the gate line and the common electrode line;

a patterned semiconductor layer located on the insulating layer, wherein the patterned semiconductor layer comprises a channel layer and a photosensitive resistance layer, and the channel layer is located above the gate line and overlaps the gate line; and

a data line layer located on the insulating layer, wherein the data line layer comprises a patterned first data line, a second data line and a third data line, the first and the second data lines are coupled to the channel layer respectively and combine with the channel layer and the gate line to compose an active component, the second data line and the third data line respectively are coupled to the photosensitive resistance layer and combine with the photosensitive resistance layer to compose a light detecting component.

2. The pixel array substrate according to claim 1, wherein the photosensitive resistance layer is shut down before the photosensitive resistance layer is radiated by a light, and the photosensitive resistance layer forms a channel between the second data line and the third data line when the photosensitive resistance layer is radiated by the light.

3. The pixel array substrate according to claim 1, wherein the photosensitive resistance layer is formed by indium gallium zinc oxide (IGZO).

4. The pixel array substrate according to claim 1, further comprising a protection layer and a mask layer, wherein the protection layer covers the first data line, the second data line and the third data line, and the mask layer, disposed on the protection layer, is located above the active component and overlaps the active component.

5. A pixel array substrate, comprising:

a substrate; and

a plurality of pixel structures disposed on the substrate, wherein each pixel structure comprises;

a patterned first metal layer, comprising a gate line and a common electrode line;

an insulating layer covering the gate line and the common electrode line;

a channel layer located on the insulating layer, wherein the channel layer is located above the gate line and overlaps the gate line;

a data line layer located on the insulating layer, wherein the data line layer comprises a patterned first data line and a second data line, and the first and the second data lines are coupled to the channel layer respectively and combines with the channel layer and the gate line to compose an active component;

a first protection layer covering the first data line and a part of the second data line;

a patterned second metal layer, comprising a contact electrode and a third data line, wherein the contact electrode is located on the second data line, and the third data line is located on the first protection layer; and

a photosensitive resistance layer disposed on the first protection layer, wherein the photosensitive resistance layer covers the contact electrode and the third data line and combines with the contact electrode, the second data line and the third data line to compose a light detecting component.

6. The pixel array substrate according to claim 5, wherein the photosensitive resistance layer is shut down before the photosensitive resistance layer is radiated by a light, and the photosensitive resistance layer forms a channel between the second data line and the third data line when the photosensitive resistance layer is radiated by the light.

7. The pixel array substrate according to claim 5, wherein the photosensitive resistance layer is formed by IGZO.

8. The pixel array substrate according to claim 5, further comprising a second protection layer covering the photosensitive resistance layer, wherein the patterned second metal layer further comprises a mask layer disposed on the first protection layer and located above the gate line and overlaps the active component.

9. The pixel array substrate according to claim 5, wherein the patterned second metal layer further comprises a conductive plug connected between the third data line and the common electrode line.

10. A detecting module, comprising:

a pixel array substrate, comprising;

a substrate; and

a plurality of pixel structures disposed on the substrate, wherein each pixel structure comprises;

a patterned metal layer, comprising a gate line and a common electrode line;

an insulating layer covering the gate line and the common electrode line;

a patterned semiconductor layer located on the insulating layer, wherein the patterned semiconductor layer comprises a channel layer and a photosensitive resistance layer, and the channel layer is located above the gate line and overlaps the gate line; and

a data line layer located on the insulating layer, wherein the data line layer comprises a patterned first data line, a second data line and a third data line, the first and the second data lines are coupled to the channel layer respectively and combine with the channel layer and the gate line to compose an active component, and the second data line and the third data line are coupled to the photosensitive resistance layer respectively and combine with the photosensitive resistance layer to compose a light detecting component;

a driving unit connecting each gate line; and

a detection signal processing unit connecting each first data line.

11. The detecting module according to claim 10, wherein the photosensitive resistance layer is shut down before the photosensitive resistance layer is radiated by a light, and the photosensitive resistance layer forms a channel between the second data line and the third data line when the photosensitive resistance layer is radiated by the light.

12. The detecting module according to claim 10, wherein the photosensitive resistance layer is formed by IGZO.

13. The detecting module according to claim 10, further comprising a protection layer and a mask layer, wherein the protection layer covers the first data line, the second data line and the third data line, and the mask layer disposed on the protection layer is located above the gate line and overlaps the active component.