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Metal-Oxide Based Thin-Film Transistors with Fluorinated Active Layer

  • US 20130037798A1
  • Filed: 08/10/2012
  • Published: 02/14/2013
  • Est. Priority Date: 08/11/2011
  • Status: Active Grant
First Claim
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1. A thin-film transistor comprising:

  • a substrate;

    a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate;

    fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer;

    a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and

    a gate dielectric material separating the gate electrode and the channel.

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