Metal-Oxide Based Thin-Film Transistors with Fluorinated Active Layer
First Claim
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1. A thin-film transistor comprising:
- a substrate;
a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate;
fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer;
a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and
a gate dielectric material separating the gate electrode and the channel.
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Abstract
A thin-film transistor with a fluorinated channel and fluorinated source and drain regions and methods of fabrication are provided. The thin-film transistor includes: a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and a gate dielectric material separating the gate electrode and the channel.
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Citations
18 Claims
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1. A thin-film transistor comprising:
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a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and a gate dielectric material separating the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of producing a thin-film transistor, comprising:
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forming a metal-oxide semiconductor active island on a substrate; forming a gate dielectric layer on top of the active island and the substrate; introducing fluorine into the semiconductor active island through the gate dielectric layer; forming a gate electrode of the transistor; introducing impurities including fluorine into source and drain regions and activating the impurities; forming a second insulating layer; opening access holes through the gate dielectric layer and the second insulating layer to expose a gate and the source and drain regions of the transistor; forming a metal layer on top of the second insulating layer; and patterning the metal layer to form interconnects. - View Dependent Claims (14, 15)
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16. A method of producing the thin-film transistor, comprising:
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forming a semiconductor active island on a substrate; introducing fluorine into the semiconductor active island; forming a gate dielectric material on top of active island and the substrate; forming a gate electrode of the transistor; introducing impurities including fluorine into the source and drain regions of the transistor and activating the impurities; forming a second insulating layer; opening access holes through the gate dielectric material and the second insulating layer to expose a gate and the source and drain regions of the transistor; forming a metal layer on top of the second insulating layer; and patterning the metal layer to form interconnects. - View Dependent Claims (17, 18)
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Specification