METHOD OF FORMING A SEMICONDUCTOR POWER SWITCHING DEVICE AND STRUCTURE THEREFOR

• US 20130038304A1
• Filed: 08/08/2011
• Published: 02/14/2013
• Est. Priority Date: 08/08/2011
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Roig Guitart, Jaume, Bauwens, Filip
• Granted Patent: US 8,981,748 B2
• Time in Patent Office: Days
• US Class Current: 323/282
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H03K 17/06 Modifications for ensuring a fully conducting state
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

At least one exemplary embodiment is directed to a semiconductor power switching device including a ctrl switch, a sync switch, where a resistor is electrically connected between the ctrl switch and the sync switch.

Claims

1. A semiconductor power switching device comprising:

a ctrl switch, where the ctrl switch is a shield gate transistor;

a sync switch, where the sync switch is a transistor; and

a resistor, were the resistor connects a first plate on the ctrl switch with a source of the sync switch.

2. The switching device according to claim 1, where the sync switch is a second shield gate transistor.

3. The switching device according to claim 1, where the resistor is at least one of an external resistor, an intrinsic distributed shield plate resistance, an existing shield plate meander resistor, a trench resistor, poly resistor, a diffused resistor, or a metal resistor.

4. The switching device according to claim 2, where the resistor is at least one of an external resistor, an intrinsic distributed shield plate resistance, an existing shield plate meander resistor, a trench resistor, poly resistor, or a metal resistor.

5. The switching device according to claim 3, where the resistor is greater than 100 ohms.

6. The switching device according to claim 4, where the resistor is greater than 100 ohms.

7. The switching device according to claim 5 where the resistor has a value between about 100 ohms and about 1000 ohms.

8. The switching device according to claim 6, where the resistor has a value between about 100 ohms and about 1000 ohms.

9. The switching device according to claim 7, where the first plate on the ctrl switch is a ctrl shield plate.

10. The switching device according to claim 8, where the first plate on the ctrl switch is a ctrl shield plate.

11. The switching device according to claim 9, where the first plate on the ctrl switch is connected to a second plate on the sync switch.

12. The switching device according to claim 10, where the first plate on the ctrl switch is connected to a second plate on the sync switch.

13. The switching device according to claim 11 where the second plate is a sync shield plate in the sync switch.

14. The switching device according to claim 12 where the second plate is a sync shield plate in the sync switch.

15. The switching device according to claim 7, further comprising:

an inductor, where the inductor is connected in series with the resistor.

16. The switching device according to claim 8, further comprising:

an inductor, where the inductor is connected in series with the resistor.

17. The switching device according to claim 15, where the inductor has a value between about 0.01 nH and about 500 nH.

18. The switching device according to claim 16, where the inductor has a value between about 0.01 nH and about 500 nH.

19. The switching device according to claim 9, where the ctrl switch is a MOSFET.

20. The switching device according to claim 10, where the ctrl switch is a MOSFET.

21. The switching device according to claim 13, where the sync switch is a MOSFET.

22. The switching device according to claim 14, where the sync switch is a MOSFET.

23. A method of reducing ringing oscillation in a voltage control device comprising:

configuring a voltage control device with a ctrl switch and a sync switch including a source, where the ctrl switch has a ctrl shield plate; and

connecting a resistor between the ctrl shield plate and a source of the sync switch.

24. The method according to the claim according to claim 23 where the ctrl switch is a shield gate transistor.

25. The method according to claim 23, further comprising:

connecting a ctrl shield plate of the ctrl switch to the source.

26. The method according to claim 25, where the sync switch is a shield gate transistor.

27. The method according to claim 26, where the sync switch has a sync shield plate, where ctrl shield plate is connected to the sync shield plate.

28. A buck converter comprising:

a ctrl switch, where the ctrl switch is a MOSFET, where the ctrl switch includes a ctrl shield plate;

a sync switch, where the sync switch is a MOSFET, where the sync switch includes a sync shield plate; and

a resistor, where the resistor is connected between the ctrl shield plate and the sync shield plate, where the ctrl shield plate is connected to a sync switch source, and where the resistor has a value between about 0.1 mohms and about 100 kohms.