MIRROR FOR THE EUV WAVELENGTH RANGE, SUBSTRATE FOR SUCH A MIRROR, PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY COMPRISING SUCH A MIRROR OR SUCH A SUBSTRATE, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION OBJECTIVE
First Claim
1. A mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, comprising:
- a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
),wherein the layer arrangement comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, wherein the transmission of the EUV radiation through the layer arrangement amounts to less than 2%, and wherein the layer arrangement comprises at least one layer which is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides.
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Accused Products
Abstract
A mirror (1a; 1a′; 1b; 1b′; 1c; 1c′) for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P′″) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include two individual layers composed of different materials for a high refractive index layer (H′″) and a low refractive index layer (L′″), wherein the layer arrangement includes at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.
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Citations
27 Claims
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1. A mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, comprising:
-
a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
),wherein the layer arrangement comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, wherein the transmission of the EUV radiation through the layer arrangement amounts to less than 2%, and wherein the layer arrangement comprises at least one layer which is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 19, 20, 21)
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2. A mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, comprising:
-
a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
),wherein the layer arrangement comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, wherein the surface protecting layer (SPL, Lp) or the surface protecting layer system (SPLS) experiences an irreversible change in volume of less than 1% under EUV radiation, and wherein the layer arrangement comprises at least one layer which is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides. - View Dependent Claims (22, 24)
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3. A mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, comprising:
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a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one surface layer system (P′
″
) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) each comprise two individual layers composed of different materials for a high refractive index layer (H′
″
) and a low refractive index layer (L′
″
),wherein the layer arrangement comprises at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, wherein the surface protecting layer (SPL, Lp) or the surface protecting layer system (SPLS) prevents an irreversible alteration of the surface of the substrate (S) under the EUV radiation of more than 0.1 nm measured in the normal direction at a location within the irradiated region of the substrate (S) relative to the surface of the substrate (S) at a location outside the irradiated region measured in the same direction and exerts a tensile stress at least partly compensating layer stresses in the layer arrangement, and wherein the layer arrangement comprises at least one layer which is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides. - View Dependent Claims (23, 25)
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- 15. A substrate for a mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, wherein at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm protects the substrate (S) from incident EUV radiation, such that less than 2% of the incident EUV radiation reaches the substrate (S), and wherein the at least one surface protecting layer (SPL, Lp) or at least one layer of the at least one surface protecting layer system (SPLS) is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides.
- 16. A substrate for a mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, wherein at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm protects the substrate (S) from an irreversible change of volume under EUV radiation, and wherein the at least one surface protecting layer (SPL, Lp) or at least one layer of the at least one surface protecting layer system (SPLS) is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides.
- 17. A substrate for a mirror for radiation in the extreme-ultraviolet (EUV) wavelength range, wherein at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm prevents an irreversible alteration of the surface of the substrate (S) under the EUV radiation of more than 0.1 nm measured in the normal direction at a location within the irradiated region of the substrate (S) relative to the surface of the substrate (S) at a location outside the irradiated region measured in the same direction and exerts a tensile stress at least partly compensating layer stresses of further layers to be applied on the substrate, and wherein the at least one surface protecting layer (SPL, Lp) or at least one layer of the at least one surface protecting layer system (SPLS) is formed from or as a compound is composed of a material from the group consisting of nickel, carbon, boron carbide, cobalt, beryllium, silicon, and silicon oxides.
Specification