Method for Manufacturing a Semiconductor Device
First Claim
1. A method for forming a semiconductor device, comprising:
- providing a semiconductor body having a horizontal surface;
forming an epitaxy hard mask on the horizontal surface;
forming an epitaxial region by selective epitaxy on the horizontal surface relative to the epitaxy hard mask so that the epitaxial region is adjusted to the epitaxy hard mask;
polishing the epitaxial region by a chemical-mechanical polishing process stopping on the epitaxy hard mask;
forming a vertical trench from the horizontal surface into the semiconductor body;
forming an insulated field plate in a lower portion of the vertical trench comprising forming a field oxide; and
forming an insulated gate electrode above the insulated field plate such that the field oxide extends, in a vertical direction, up to the epitaxial region.
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Abstract
A method for forming a semiconductor device is provided. The method includes providing a semiconductor body with a horizontal surface. An epitaxy hard mask is formed on the horizontal surface. An epitaxial region is formed by selective epitaxy on the horizontal surface relative to the epitaxy hard mask so that the epitaxial region is adjusted to the epitaxy hard mask. The epitaxial region is polished by a chemical-mechanical polishing process stopping on the epitaxy hard mask. A vertical trench is formed in the semiconductor body. An insulated field plate is formed in a lower portion of the vertical trench and an insulated gate electrode is formed above the insulated field plate. Further, a method for forming a field-effect semiconductor device is provided.
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Citations
21 Claims
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1. A method for forming a semiconductor device, comprising:
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providing a semiconductor body having a horizontal surface; forming an epitaxy hard mask on the horizontal surface; forming an epitaxial region by selective epitaxy on the horizontal surface relative to the epitaxy hard mask so that the epitaxial region is adjusted to the epitaxy hard mask; polishing the epitaxial region by a chemical-mechanical polishing process stopping on the epitaxy hard mask; forming a vertical trench from the horizontal surface into the semiconductor body; forming an insulated field plate in a lower portion of the vertical trench comprising forming a field oxide; and forming an insulated gate electrode above the insulated field plate such that the field oxide extends, in a vertical direction, up to the epitaxial region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for forming a semiconductor device, comprising:
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providing a semiconductor body having a horizontal surface; forming an epitaxy hard mask on the horizontal surface; depositing a semiconductor material on the semiconductor body by epitaxial deposition selective to the epitaxy hard mask by selective epitaxy so that, in a vertical cross-section, at least two spaced apart epitaxial regions are formed; removing the epitaxy hard mask selective to the semiconductor material so that, in the vertical cross-section, sidewalls of the at least two spaced apart epitaxial regions are exposed; forming a trench hard mask comprising forming a dielectric layer so that, in the vertical cross-section, each of the sidewalls of the at least two spaced apart epitaxial regions is covered by the dielectric layer; etching a vertical trench into the semiconductor body using the trench hard mask as an etching mask; and forming an insulated gate electrode which is, in the vertical cross-section, arranged between the at least two spaced apart epitaxial regions. - View Dependent Claims (9, 10, 11, 12)
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13. A method for forming a field-effect semiconductor device, comprising:
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providing a semiconductor body having a horizontal surface; forming a trench hard mask on the horizontal surface and a vertical trench in the semiconductor body self-aligned to the trench hard mask; forming an insulated field plate in a lower portion of the vertical trench; forming an epitaxy hard mask which is self-aligned to the trench hard mask; removing the trench hard mask selectively to the epitaxy hard mask to partly expose the semiconductor body; depositing a semiconductor material on the semiconductor body by epitaxial deposition selective to the epitaxy hard mask by selective epitaxy so that, in a vertical cross-section, at least two spaced apart epitaxial regions are formed; removing the epitaxy hard mask so that, in the vertical cross-section, sidewalls of the at least two spaced apart epitaxial regions are exposed; and forming an insulated gate electrode which is, in the vertical cross-section, arranged between the at least two spaced apart epitaxial regions. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for forming a field-effect semiconductor device, comprising:
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providing a semiconductor body having a horizontal surface and a hard mask layer on the horizontal surface; forming a vertical trench in the hard mask layer and the semiconductor body; forming a field oxide on a side wall and a bottom wall of the vertical trench; forming a field plate in a lower portion of the vertical trench; forming a liner layer covering at least the trench hard mask and an upper portion of the field oxide; forming a dielectric plug in an upper portion of the vertical trench, the dielectric plug extending beyond the horizontal surface; removing the trench hard mask to partly expose the semiconductor body; depositing a semiconductor material on the semiconductor body by epitaxial deposition selective to the dielectric plug by selective epitaxy so that, in a vertical cross-section, at least two spaced apart epitaxial regions are formed; exposing, in the vertical cross-section, sidewalls of the at least two spaced apart epitaxial regions by removing the dielectric plug at least between at least two spaced apart epitaxial regions. - View Dependent Claims (20, 21)
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Specification