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Method for Manufacturing a Semiconductor Device

  • US 20130040443A1
  • Filed: 10/16/2012
  • Published: 02/14/2013
  • Est. Priority Date: 01/13/2011
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, comprising:

  • providing a semiconductor body having a horizontal surface;

    forming an epitaxy hard mask on the horizontal surface;

    forming an epitaxial region by selective epitaxy on the horizontal surface relative to the epitaxy hard mask so that the epitaxial region is adjusted to the epitaxy hard mask;

    polishing the epitaxial region by a chemical-mechanical polishing process stopping on the epitaxy hard mask;

    forming a vertical trench from the horizontal surface into the semiconductor body;

    forming an insulated field plate in a lower portion of the vertical trench comprising forming a field oxide; and

    forming an insulated gate electrode above the insulated field plate such that the field oxide extends, in a vertical direction, up to the epitaxial region.

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