SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a semiconductor device comprising:
- forming, in a semiconductor substrate, a substrate portion and a fin portion on the substrate portion;
forming a first silicon oxide film on each side surface of the fin portion;
forming, on each side surface of the first silicon oxide film, a polysilazane film having an upper surface lower than an upper surface of the first silicon oxide film;
converting the polysilazane film into a silicon oxynitride film by nitriding and oxidizing the polysilazane film;
forming a second silicon oxide film on an entire surface to cover the fin portion;
etching the first silicon oxide film and the second silicon oxide film to make the upper surface of the first silicon oxide film not higher than an upper surface of the silicon oxynitride film; and
forming a heavily doped semiconductor layer in the fin portion.
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Accused Products
Abstract
According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion.
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Citations
18 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming, in a semiconductor substrate, a substrate portion and a fin portion on the substrate portion; forming a first silicon oxide film on each side surface of the fin portion; forming, on each side surface of the first silicon oxide film, a polysilazane film having an upper surface lower than an upper surface of the first silicon oxide film; converting the polysilazane film into a silicon oxynitride film by nitriding and oxidizing the polysilazane film; forming a second silicon oxide film on an entire surface to cover the fin portion; etching the first silicon oxide film and the second silicon oxide film to make the upper surface of the first silicon oxide film not higher than an upper surface of the silicon oxynitride film; and forming a heavily doped semiconductor layer in the fin portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor substrate including a substrate portion and a fin portion on the substrate portion; a first silicon oxide film formed on each lower side surface of the fin portion; a silicon oxynitride film formed on each side surface of the first silicon oxide film and having an upper surface not lower than an upper surface of the first silicon oxide film; and a heavily doped semiconductor layer formed in the fin portion. - View Dependent Claims (15, 16, 17, 18)
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Specification