VERTICALLY ORIENTED SEMICONDUCTOR DEVICE AND SHIELDING STRUCTURE THEREOF
First Claim
1. A semiconductor device, comprising:
- a substrate having a surface that is defined by a first axis and a second axis that is perpendicular to the first axis; and
a transformer disposed over the surface of the substrate, the transformer including a first coil and a second coil, the first and second coils having respective winding orientations that are non-parallel to the surface of the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate that spans in an X-direction and a Y-direction that is orthogonal to the X-direction. The semiconductor device includes an interconnect structure formed over the substrate in a Z-direction that is orthogonal to both the X-direction and the Y-direction. The interconnect structure includes a plurality of metal lines interconnected together in the Z-direction by a plurality of vias. The interconnect structure contains a transformer device that includes a primary coil and a secondary coil. The primary coil and the secondary coil are each wound at least partially in the Z-direction.
-
Citations
20 Claims
-
1. A semiconductor device, comprising:
-
a substrate having a surface that is defined by a first axis and a second axis that is perpendicular to the first axis; and a transformer disposed over the surface of the substrate, the transformer including a first coil and a second coil, the first and second coils having respective winding orientations that are non-parallel to the surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device, comprising:
-
a substrate that spans in an X-direction and a Y-direction that is orthogonal to the X-direction; and an interconnect structure formed over the substrate in a Z-direction that is orthogonal to both the X-direction and the Y-direction, the interconnect structure including a plurality of metal lines interconnected together in the Z-direction by a plurality of vias, the interconnect structure containing a transformer device that includes a primary coil and a secondary coil, the primary coil and the secondary coil each being wound at least partially in the Z-direction. - View Dependent Claims (11, 12, 13, 14, 15)
-
-
16. A method of fabricating a semiconductor device, comprising:
-
providing a substrate having a surface that is defined by a first axis and a second axis that is perpendicular to the first axis; and forming an interconnect structure over the surface of the substrate, the interconnect structure having a plurality of conductive lines interconnected by a plurality of vias, wherein the forming the interconnect structure includes forming a transformer device as a part of the interconnect structure, wherein the transformer device includes a first coil and a second coil that each have a winding orientation that is defined at least in part by a third axis that is perpendicular to the surface of the substrate. - View Dependent Claims (17, 18, 19, 20)
-
Specification