NON-VOLATILE MEMORY DEVICE HAVING VERTICAL STRUCTURE AND METHOD OF OPERATING THE SAME
First Claim
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1. A method of operating a non-volatile memory device, the method comprising:
- applying a program voltage to one memory cell selected from among a plurality of memory cells arranged in series of a NAND string from a plurality of vertically arranged NAND strings, and applying a pass voltage to the remaining memory cells of the NAND string, where the pass voltage is less than the program voltage; and
applying a first voltage to a first selection transistor closest to the plurality of memory cells in the NAND string, the first selection transistor from a pair of first selection transistors that is adjacent to the plurality of memory cells in the NAND string, and applying a second voltage to a remaining first selection transistor from the pair of first selection transistors, where the second voltage is different from the first voltage.
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Abstract
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
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Citations
18 Claims
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1. A method of operating a non-volatile memory device, the method comprising:
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applying a program voltage to one memory cell selected from among a plurality of memory cells arranged in series of a NAND string from a plurality of vertically arranged NAND strings, and applying a pass voltage to the remaining memory cells of the NAND string, where the pass voltage is less than the program voltage; and applying a first voltage to a first selection transistor closest to the plurality of memory cells in the NAND string, the first selection transistor from a pair of first selection transistors that is adjacent to the plurality of memory cells in the NAND string, and applying a second voltage to a remaining first selection transistor from the pair of first selection transistors, where the second voltage is different from the first voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of operating a non-volatile memory device, the method comprising:
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applying a program voltage to one memory cell selected from among a plurality of memory cells arranged in series of a NAND string from a plurality of vertically arranged NAND strings, and applying a pass voltage to the remaining memory cells of the NAND string, where the pass voltage is less than the program voltage; and applying a first voltage to a pair of first selection transistors closest to the plurality of memory cells in the NAND string. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of operating a non-volatile memory device having a control logic unit and a row decoder, the method comprising:
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applying a program voltage to one memory cell selected from among a plurality of memory cells arranged in series of a NAND string from a plurality of vertically arranged NAND strings, and applying a pass voltage to the remaining memory cells of the NAND string, where the pass voltage is less than the program voltage; and applying a first voltage to at least one first selection transistor closest to the plurality of memory cells in the NAND string, and applying a second voltage to at least one second selection transistor that is adjacent to the plurality of memory cells in the NAND string and opposite to the first selection transistor, wherein applying the second voltage to the at least one second selection transistor further comprises;
transmitting a row address signal from the control logic unit to the row decoder, and applying the second voltage from the row decoder to the at least one ground selection line coupled to the at least one second selection transistor. - View Dependent Claims (15, 16, 17, 18)
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Specification