×

NON-VOLATILE MEMORY DEVICE HAVING VERTICAL STRUCTURE AND METHOD OF OPERATING THE SAME

  • US 20130044545A1
  • Filed: 10/23/2012
  • Published: 02/21/2013
  • Est. Priority Date: 02/02/2009
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of operating a non-volatile memory device, the method comprising:

  • applying a program voltage to one memory cell selected from among a plurality of memory cells arranged in series of a NAND string from a plurality of vertically arranged NAND strings, and applying a pass voltage to the remaining memory cells of the NAND string, where the pass voltage is less than the program voltage; and

    applying a first voltage to a first selection transistor closest to the plurality of memory cells in the NAND string, the first selection transistor from a pair of first selection transistors that is adjacent to the plurality of memory cells in the NAND string, and applying a second voltage to a remaining first selection transistor from the pair of first selection transistors, where the second voltage is different from the first voltage.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×