METHODS FOR MANUFACTURING A METAL-OXIDE THIN FILM TRANSISTOR

• US 20130045567A1
• Filed: 08/13/2012
• Published: 02/21/2013
• Est. Priority Date: 08/18/2011
• Status: Active Grant

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: E Ink Holdings Incorporated
• Inventors: TSAI, Chuang-Chuang, ZAN, Hsiao-Wen, YEH, Chun-Cheng, CHEN, Liang-Hao
• Granted Patent: US 8,927,330 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.

Claims

1. A method for manufacturing a metal-oxide thin film transistor, comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer over the gate electrode;

forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer;

forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region;

forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode;

annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200°

C. to 350°

C.

2. The method according to claim 1, wherein the step of forming the metal-oxide semiconductor layer comprises performing a radio frequency magnetron sputtering process or a direct current sputtering process.

3. The method according to claim 1, wherein the metal-oxide semiconductor layer comprises a material selected from the group consisting of amorphous indium-gallium-zinc oxide (a-IGZO) indium oxide-zinc oxide (IZO) and amorphous indium-zinc-tin-oxide (a-IZTO).

4. The method according to claim 1, wherein the step of forming the mobility-enhancing layer comprises performing a thermal evaporation process or a sputtering process.

5. The method according to claim 1, wherein the mobility-enhancing layer comprises any of inorganic material, ionic compound and covalent compound that is capable of chemically bonding with oxygen.

6. The method according to claim 1, wherein the mobility-enhancing layer comprises a material selected from the group consisting of Ba, Ca, Ti, Fe, Ga, Mg, Al, Ge, Si and an oxide thereof.

7. The method according to claim 1, after the step of forming the source electrode and the drain electrode, further comprising forming a patterned passivation layer to cover the source electrode and the drain electrode, wherein the patterned passivation layer has an opening exposing a portion of the channel region.

8. The method according to claim 1, after the step of forming the mobility-enhancing layer, further comprising forming a patterned passivation layer to cover the source electrode, the drain electrode, the metal-oxide semiconductor layer and the mobility-enhancing layer.

9. The method according to claim 1, prior to the step of forming the mobility-enhancing layer, further comprising thermal treating the metal-oxide semiconductor layer in an environment at a temperature of about 200°

C. to about 350°

C.

10. The method according to claim 1, wherein the temperature of the annealing step ranges from about 200°

C. to about 250°

C.

11. A method for manufacturing a metal-oxide thin film transistor, comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer over the gate electrode;

forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer;

forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region;

treating a surface of the channel region of the metal-oxide semiconductor layer by using a mobility-enhancing medium; and

annealing the treated metal-oxide semiconductor layer in an environment at a temperature of about 200°

C. to 350°

C.

12. The method according to claim 11, wherein the mobility-enhancing medium comprises any of liquid, gas and organic material that is capable of chemically bonding with oxygen.

13. The method according to claim 11, wherein the mobility-enhancing medium comprises at least one material selected from the group consisting of 2-methylpentane, 2,2-dimethylbutane, tert-butanol and benzene.

14. The method according to claim 11, wherein the mobility-enhancing medium comprises at least one of carbon monoxide and hydrogen gas.

15. The method according to claim 11 after the step of treating the surface of the channel region, further comprising forming a passivation layer to cover the source electrode, the drain electrode and the metal-oxide semiconductor layer.

16. The method according to claim 11, wherein the temperature of the annealing step ranges from about 200°

C. to about 250°

C.